Optical and electrical properties of the transparent conductor SrVO3 without long-range crystalline order

Boileau, A.; Cheikh, Aïmane; Fouchet, Arnaud; David, Adrian; Galindo, R. Escobar; Labbé, Christophe; Marie, Philippe; Gourbilleau, Fabrice; Lüders, U.

doi:10.1063/1.5016245

Cited by 24 publications

(48 citation statements)

References 29 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Thus, the observed evolution of the resistivity with T G can be explained by the decrease of disorder and therefore to the increase in crystalline quality, as was observed in the XRD study on LAO. However, for the films grown on LSAT, an exceptionally high crystalline quality is already observed at 400 °C, comparable to the one of the film grown at 700 °C, which does not seem consistent with structural disorder being at the origin of the degradation of the electronic transport. Moyer et al have shown that an imbalance of the Sr‐V stoichiometry may also be at the origin of high residual resistivities and low mobilities, but the RBS analysis of the films of this study did not show an evolution for different T G or different substrates.…”

Section: Resultsmentioning

confidence: 70%

“…At most, we observe a variation in the resistivity of a factor of two. Hence, the influences of the substrate and T G are relatively small compared to the need of well‐defined crystalline perovskite structure for good transport properties, as was also pointed out for thin films on LSAT …”

Section: Resultsmentioning

confidence: 87%

“…First, the picture of deposited films on STO, LAO, and LSAT displayed in Figure a gives an overview of the good transparency of SVO films for a thickness of 30 nm. Concerning X‐ray diffraction (XRD) measurements, Figure b shows specular θ–2θ diffractograms around the (002) Bragg peak of SVO films grown on STO and LAO between 300 and 700 °C (the data concerning the films on LSAT were published elsewhere). At 300 °C, only the peak attributed to the (002) reflection arising from the substrate is visible at 46.47° and 47.97° for STO and LAO, respectively.…”

Section: Resultsmentioning

confidence: 99%

“…Temperature dependence of the electrical resistivity of SVO films grown on STO, LAO, and LSAT substrates between 400 and 700 °C. Data in the bottom panel are reproduced from Boileau et al…”

Section: Resultsmentioning

confidence: 99%

“…The demonstrated properties of this system stand up to those of the standard indium tin oxide material, providing therefore a valuable alternative for a number of applications. Although it was shown that the amorphous phase of SVO is not conducting, the potential of application stays important in adapted systems due to the absence of indium and its price fluctuations related to the limited availability. An intriguing aspect of SVO as a TCO is the fact that although the charge density is that of typical metals (in the range of 10 22 cm −3 ), the screened plasma frequency ω p is pushed out of the visible range due to the strong electronic correlations enhancing the effective mass m* .…”

Section: Introductionmentioning

confidence: 99%

See 4 more Smart Citations

Tuning of the Optical Properties of the Transparent Conducting Oxide SrVO₃ by Electronic Correlations

Boileau

Cheikh

Fouchet

et al. 2019

Advanced Optical Materials

View full text Add to dashboard Cite

of SVO as a TCO is the fact that although the charge density is that of typical metals (in the range of 10 22 cm −3 ), the screened plasma frequency ω p is pushed out of the visible range due to the strong electronic correlations enhancing the effective mass m*. Consequently, the electronic correlations do not only govern the electronic transport properties, but also the optical ones in the visible range.Such interplay between the electronic and optical properties via the electronic correlations may also open a new way for the optimization of the functional properties of SVO. In strongly correlated metals, it is known that strain may influence the correlation characteristics via the related crystal distortions, [3][4][5] which were also predicted theoretically for SVO. [6,7] In a strongly correlated TCO as SVO, it may therefore be possible to not only influence the electrical transport by strain, but also the optical properties. Although the structural and electronic properties of SVO were studied intensely in the thin film [8][9][10][11][12] or in superlattices form, [10,13] no comparative study of SVO films on different substrates inducing variation of strain was published, neither its influence on the optical properties. The aim of this study is therefore to use three substrates, on which epitaxial growth of SVO is possible, in order to elucidate the influence of the strain on both the electronic and the optical properties.However, in the discussion of the relationship between structure and properties in transition metal oxide thin films, the stoichiometry of the films has also to be taken into account. Especially in SVO, it has been shown that both a cationic [9] as also an anionic nonstoichiometry [11,12,14,15] play an important role in the properties. The management of the oxygen content is a special issue in SVO due to the existence of some oxides with higher oxidation state of vanadium such as Sr 3 V 2 O 8 or Sr 2 V 2 O 7 , being thermodynamically more stable than the perovskite structure. [16] This implies that widely used mechanisms to influence on the oxygen stoichiometry of thin films, as the growth in different oxygen pressures or postannealing treatments, are not possible or have to be controlled closely in order to avoid the formation of the orthovanadate, which is transparent but insulating. Even more, recently it has been shown in a closely related system, SrCoO 3 , that strain and oxygen vacancies show a complex interplay: [17] in films undergoing a tensile strain, the density of oxygen vacancies is enhanced, The vanadate SrVO 3 is a transparent conductor perovskite with optical and electrical properties competing with those of the most-used indium tin oxide material. Although its charge density is comparable to that of metals, SrVO 3 shows a plasma frequency below the visible range due to strong electronic correlations characterizing the electronic transport in this material and enhancing the effective mass. Therefore, the well-known interplay between the structure and the electronic properties...

show abstract

Section: Resultsmentioning

confidence: 70%

Section: Resultsmentioning

confidence: 87%

Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations

Tuning of the Optical Properties of the Transparent Conducting Oxide SrVO₃ by Electronic Correlations

Boileau

Cheikh

Fouchet

et al. 2019

Advanced Optical Materials

View full text Add to dashboard Cite

show abstract

High Carrier Mobility, Electrical Conductivity, and Optical Transmittance in Epitaxial SrVO₃ Thin Films

Mirjolet

Sánchez

Fontcuberta

2019

Adv Funct Materials

View full text Add to dashboard Cite

The urgent need for more performant transparent conducting electrodes is stimulating intensive research on oxide thin films based on early transition metals (e.g., V, Nb, Mo, etc.), where it is expected that the partially occupied (i.e., nd 1 , nd 2 …) conduction band will give rise to metallic conductivity. Growing thin films of these oxides typically requires an extremely low oxygen pressure. However, in growth methods involving hyperthermal kinetics (such as pulsed laser deposition), this may have severe detrimental effects on the electrical and optical properties of the film. Here, it is shown that the use of a nonreactive gas during a pulsed laser deposition process allows epitaxial SrVO 3 films to be obtained with low room temperature resistivity (ρ ≈ 31 μΩ cm), large carrier mobility (μ ≈ 8.3 cm 2 V −1 s −1 ), and large residual resistivity ratio (RRR ≈ 11.5), while improving optical transparency in the visible range. It is argued that the success of this growth strategy relies on the modulation of energetics of plasma species and a concomitant reduction of defects in the films. These findings may find applications in other oxide-based thin film technologies (i.e., ferroelectric tunnel memories, etc.) where growth-induced point effects may compromise functionality. Figure 6. a) Optical transmittance of SVO films on LSAT, about 50 nm thick, deposited either at P(Ar) = 0 mbar (red) or at P(Ar) = 0.1 mbar (blue). Transmission spectrum of the pristine LSAT substrate is also included (black). For reference, the maximal transmittance in the visible range of state-of-the-art SVO films grown on LSAT by hybrid-MBE [20] is included (dashed line). b) Picture of the three samples displayed on the background ordered as in the legend of figure a).www.afm-journal.de www.advancedsciencenews.com 1808432 (7 of 7)

show abstract

Independent Tuning of Optical Transparency Window and Electrical Properties of Epitaxial SrVO₃ Thin Films by Substrate Mismatch

Mirjolet

Vasili

López‐Conesa

et al. 2019

Adv Funct Materials

View full text Add to dashboard Cite

Transparent metallic oxides are pivotal materials in information technology, photovoltaics, or even in architecture. They display the rare combination of metallicity and transparency in the visible range because of weak interband photon absorption and weak screening of free carriers to impinging light. However, the workhorse of current technology, indium tin oxide (ITO), is facing severe limitations and alternative approaches are needed. AMO3 perovskites, M being a nd1 transition metal, and A an alkaline earth, have a genuine metallic character and, in contrast to conventional metals, the electron–electron correlations within the nd1 band enhance the carriers effective mass (m*) and bring the transparency window limit (marked by the plasma frequency, ωp*) down to the infrared. Here, it is shown that epitaxial strain and carrier concentration allow fine tuning of optical properties (ωp*) of SrVO3 films by modulating m* due to strain‐induced selective symmetry breaking of 3d‐t2g(xy, yz, xz) orbitals. Interestingly, the DC electrical properties can be varied by a large extent depending on growth conditions whereas the optical transparency window in the visible is basically preserved. These observations suggest that the harsh conditions required to grow optimal SrVO3 films may not be a bottleneck for their future application.

show abstract

Optical and electrical properties of the transparent conductor SrVO3 without long-range crystalline order

Cited by 24 publications

References 29 publications

Tuning of the Optical Properties of the Transparent Conducting Oxide SrVO₃ by Electronic Correlations

Tuning of the Optical Properties of the Transparent Conducting Oxide SrVO₃ by Electronic Correlations

High Carrier Mobility, Electrical Conductivity, and Optical Transmittance in Epitaxial SrVO₃ Thin Films

Independent Tuning of Optical Transparency Window and Electrical Properties of Epitaxial SrVO₃ Thin Films by Substrate Mismatch

Contact Info

Product

Resources

About

Optical and electrical properties of the transparent conductor SrVO3 without long-range crystalline order

Cited by 24 publications

References 29 publications

Tuning of the Optical Properties of the Transparent Conducting Oxide SrVO3 by Electronic Correlations

Tuning of the Optical Properties of the Transparent Conducting Oxide SrVO3 by Electronic Correlations

High Carrier Mobility, Electrical Conductivity, and Optical Transmittance in Epitaxial SrVO3 Thin Films

Independent Tuning of Optical Transparency Window and Electrical Properties of Epitaxial SrVO3 Thin Films by Substrate Mismatch

Contact Info

Product

Resources

About

Tuning of the Optical Properties of the Transparent Conducting Oxide SrVO₃ by Electronic Correlations

Tuning of the Optical Properties of the Transparent Conducting Oxide SrVO₃ by Electronic Correlations

High Carrier Mobility, Electrical Conductivity, and Optical Transmittance in Epitaxial SrVO₃ Thin Films

Independent Tuning of Optical Transparency Window and Electrical Properties of Epitaxial SrVO₃ Thin Films by Substrate Mismatch