Optical and electrical properties of Bi2S3 films deposited by spray pyrolysis

Medles, M.; Benramdane, N.; Bouzidi, A.; Nakrela, A.; Tabet-Derraz, H.; Kebbab, Z.; Mathieu, C.; Khelifa, B.; Desfeux, Rachel

doi:10.1016/j.tsf.2005.09.186

Cited by 67 publications

(23 citation statements)

References 30 publications

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“…The conductivity increases exponentially with temperature analogously to that previously reported for Bi 2 S 3 thin films and nanowires. [12,26] The spectral dependence of the photoconductivity is shown in Figure 3 c and compared to the absorbance spectrum. The close resemblance of the two curves proves that the photogenerated carriers are indeed originating from quantum confined excitons generated within the nanowires.…”

Section: Methodsmentioning

confidence: 99%

Large‐Scale Synthesis of Ultrathin Bi₂S₃ Necklace Nanowires

et al. 2008

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Section: Methodsmentioning

confidence: 99%

Large‐Scale Synthesis of Ultrathin Bi₂S₃ Necklace Nanowires

et al. 2008

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“…Thin films of Bi 2 S 3 have been prepared by either chemical bath deposition 16 or spray pyrolysis 17 , whilst nanowires as well as nanorod films were grown by hydrothermal synthesis 18 or solventless thermolysis 19 . These methods necessitate elevated temperatures for successful synthesis and do not produce ordered and highly interconnected 3D nanostructures that are suitable for incorporation into devices.…”

Section: Introductionmentioning

confidence: 99%

3D semiconducting nanostructures via inverse lipid cubic phases

Burton

Lei

Staniec

et al. 2017

Sci Rep

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Well-ordered and highly interconnected 3D semiconducting nanostructures of bismuth sulphide were prepared from inverse cubic lipid mesophases. This route offers significant advantages in terms of mild conditions, ease of use and electrode architecture over other routes to nanomaterials synthesis for device applications. The resulting 3D bicontinous nanowire network films exhibited a single diamond topology of symmetry Fd3m (Q227) which was verified by Small angle X-ray scattering (SAXS) and Transmission electron microscopy (TEM) and holds great promise for potential applications in optoelectronics, photovoltaics and thermoelectrics.

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“…Hence, ternary semiconducting chalcogenides have posed attention on their photonic and sensing applications. * E-mail: nsuri22@gmail.com For the preparation of ternary thin films, many researchers have used various techniques, such as spray pyrolysis [6][7][8], thermal deposition [9,10], chemical vapor deposition [11,12] and chemical bath deposition (CBD) [13][14][15]. Among these deposition techniques, CBD has several advantages, as it is an uncomplicated, economic and well-suited method for the deposition of semiconducting materials.…”

Section: Introductionmentioning

confidence: 99%

Influence of molar concentration and temperature on structural, optical, electrical and X-ray sensing properties of chemically grown nickel-bismuth-sulfide (Ni_xBi_2−xS₃) thin films

Sabarish¹,

Suriyanarayanan²,

Kalita

et al. 2018

Materials Science-Poland

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In this report, ternary semiconducting NixBi2−xS3(x = 0.2 M and 0.5 M) thin films were synthesized in situ for the first time by a chemical bath deposition technique at different bath temperatures (60 °C, 70 °C and 80 °C). The effects of concentration and deposition temperature on the deposited films were studied by combining the results of structural, morphological, optical and electrical analyses. The growth of NixBi2−xS3 films with good crystalline nature and interconnected grain arrangement takes place due to increasing the concentration of Ni2+ ions in bismuth sulfide matrix. EDS result confirmed the stoichiometry of NixBi2−xS3 formation. Wettability test demonstrated that the surface of the film was hydrophilic in nature. The optical absorption spectra revealed that the bandgap Eg of the x = 0.5 M film deposited at 70 °C was about 1.36 eV. Current-voltage (I-V) characteristics of the x = 0.5 M film deposited at 70 °C were studied under X-ray radiation and dark condition. An X-ray detection sensitivity analysis showed that the detection sensitivity is optimum when the bias voltage applied across the film is low (~0.9 V). These findings reveal that the film with x = 0.5 M deposited at 70 °C can be used as an efficient low cost X-ray sensor.

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Optical and electrical properties of Bi2S3 films deposited by spray pyrolysis

Cited by 67 publications

References 30 publications

Large‐Scale Synthesis of Ultrathin Bi₂S₃ Necklace Nanowires

Large‐Scale Synthesis of Ultrathin Bi₂S₃ Necklace Nanowires

3D semiconducting nanostructures via inverse lipid cubic phases

Influence of molar concentration and temperature on structural, optical, electrical and X-ray sensing properties of chemically grown nickel-bismuth-sulfide (Ni_xBi_2−xS₃) thin films

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Optical and electrical properties of Bi2S3 films deposited by spray pyrolysis

Cited by 67 publications

References 30 publications

Large‐Scale Synthesis of Ultrathin Bi2S3 Necklace Nanowires

Large‐Scale Synthesis of Ultrathin Bi2S3 Necklace Nanowires

3D semiconducting nanostructures via inverse lipid cubic phases

Influence of molar concentration and temperature on structural, optical, electrical and X-ray sensing properties of chemically grown nickel-bismuth-sulfide (NixBi2−xS3) thin films

Contact Info

Product

Resources

About

Large‐Scale Synthesis of Ultrathin Bi₂S₃ Necklace Nanowires

Large‐Scale Synthesis of Ultrathin Bi₂S₃ Necklace Nanowires

Influence of molar concentration and temperature on structural, optical, electrical and X-ray sensing properties of chemically grown nickel-bismuth-sulfide (Ni_xBi_2−xS₃) thin films