Optical and electrical properties of textured MoSe2 layers obtained by annealing Mo and Te thin films under Se pressure

Pouzet, J.; Bérnède, J.C.; Ouadah, Abdelaziz

doi:10.1002/pssa.2211390220

Cited by 9 publications

(4 citation statements)

References 22 publications

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“…It can be seen that χ (3) increases steadily with decreasing wavelength. Significantly, its value is well proportional to the light absorption measured by J. Pouzet et al for sputtered MoSe 2 layers 46 . The correlation between χ (3) and absorption demonstrates that χ (3) is determined by the band structure.…”

Section: Resultssupporting

confidence: 54%

Coherent Nonlinear Optical Response Spatial Self-Phase Modulation in MoSe2 Nano-Sheets

Wang

et al. 2016

Sci Rep

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Two-dimensional (2D) transition metal dichalcogenides (TMDs) are drawing increasing interest due to their relatively high carrier mobilities, valley pseudospins, and gapped electronic structures, which all indicate interesting nonlinear optical properties of these 2D materials. However, such nonlinear optical properties are so far less investigated and their correlation with the electronic structure of the material is rarely probed. In this work, we have systematically investigated the spatial self-phase modulation (SSPM) of MoSe2 flakes in a suspension form, which is a coherent third-order nonlinear optical effect. The nonlinear susceptibility χ(3) and its wavelength-dependence are measured, yielding a value of 1.1 × 10−9 e.s.u. (SI: 1.53 × 10−17 m2/V2) at 532 nm laser excitation for effective one-layer MoSe2.

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Section: Resultssupporting

confidence: 54%

Coherent Nonlinear Optical Response Spatial Self-Phase Modulation in MoSe2 Nano-Sheets

Wang

et al. 2016

Sci Rep

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“…We showed earlier that, while selenium compounds are very stable [9], tellurium compounds are not [10]. We have also shown that in the case of competition between tellurium and selenium during post-annealing of thin films, the selenium is substituted for tellurium [11]. This effect can be explained by the electronegativity values of Te (χ Te = 2.1) and Se (χ Se = 2.4) [12].…”

Section: Discussionmentioning

confidence: 86%

The influence of the substitution of Te for Se on the photoconductive properties of In₂Se_3-xTe_3xthin films

Maliki¹,

Marsillac²,

Bernède³

et al. 2001

J. Phys.: Condens. Matter

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Thin films of In2Se3-3xTe3x compounds have been synthesized by annealing, in constant argon flow, a multilayer structure of indium, selenium and tellurium, sequentially deposited. The films have been characterized by x-ray diffraction (XRD), electron microprobe analysis and x-ray photoelectron spectroscopy (XPS) measurements. These studies have shown that the thin films after annealing are stoichiometric with In at.%/(Se + Te) at.% = 2/3. Qualitative XPS analyses have provided evidence that the surface of the films is chalcogen deficient. XRD measurements have shown that the thin films are crystallized in the hexagonal structure of γ-In2Se3. The transmission curves obtained by optical measurements show that the absorption threshold is about 1.8 eV when x varies between 0 and 0.25. The photoconductivity measurements have shown that the presence of some at.% of Te (0.8 at.%-8 at.%) improves the photocurrent of the films. The photocurrent is increased by more than five orders of magnitude in the presence of 8 at.% of Te. These properties make In2Se3-3xTe3x compounds very interesting materials as regards use as absorbers in thin-film solar cells.

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“…The transmittance increases by more than 60% for the sample when NaF is present during the selenization. Although MoSe 2 has an indirect band gap of approximately 1.2 eV , as a thin layer, it is semi‐transparent . The Mo‐selenization process has been studied in depth and it is clear the increase in transmittance can be attributed to the formation of MoSe 2 .…”

Section: Solar Cell Architecturesmentioning

confidence: 99%

An overview of technological aspects of Cu(In,Ga)Se₂solar cell architectures incorporating ZnO nanorod arrays

Ohm

Riedel

Askünger

et al. 2014

Phys. Status Solidi A

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ZnO nanorod arrays placed within the architecture of the Cu(In,Ga)Se2 solar cell present promising concepts to maximize photoconversion by optical and electrical enhancement. Three different Cu(In,Ga)Se2 solar cell architectures utilizing ZnO nanorods are introduced. New technological insights are given for electrodeposited ZnO nanorod anti‐reflection coatings, examining the reflectance of devices before and after encapsulation. For the first time, device results from superstrate and bifacial CIGSe solar cells incorporating ZnO nanorods are presented. The potential benefits as well as technological aspects of fabricating these new architectures are discussed. Scanning electron microscope picture of the cross‐section of an industrially produced CIGSe solar cell with a ZnO nanorod anti‐reflection coating.

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Optical and electrical properties of textured MoSe2 layers obtained by annealing Mo and Te thin films under Se pressure

Cited by 9 publications

References 22 publications

Coherent Nonlinear Optical Response Spatial Self-Phase Modulation in MoSe2 Nano-Sheets

Coherent Nonlinear Optical Response Spatial Self-Phase Modulation in MoSe2 Nano-Sheets

The influence of the substitution of Te for Se on the photoconductive properties of In₂Se_3-xTe_3xthin films

An overview of technological aspects of Cu(In,Ga)Se₂solar cell architectures incorporating ZnO nanorod arrays

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Optical and electrical properties of textured MoSe2 layers obtained by annealing Mo and Te thin films under Se pressure

Cited by 9 publications

References 22 publications

Coherent Nonlinear Optical Response Spatial Self-Phase Modulation in MoSe2 Nano-Sheets

Coherent Nonlinear Optical Response Spatial Self-Phase Modulation in MoSe2 Nano-Sheets

The influence of the substitution of Te for Se on the photoconductive properties of In2Se3-xTe3xthin films

An overview of technological aspects of Cu(In,Ga)Se2solar cell architectures incorporating ZnO nanorod arrays

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Product

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The influence of the substitution of Te for Se on the photoconductive properties of In₂Se_3-xTe_3xthin films

An overview of technological aspects of Cu(In,Ga)Se₂solar cell architectures incorporating ZnO nanorod arrays