2019
DOI: 10.1088/1361-648x/ab18e2
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Optical and electrical properties of MoO2 and MoO3 thin films prepared from the chemically driven isothermal close space vapor transport technique

Abstract: Chemically -driven isothermal close space vapour transport was used to prepare pure MoO2 films which were eventually converted to MoO3 by annealing in air. According to temperaturedependent Raman measurements, the MoO2/MoO3 phase transformation was found to occur in the 225 -350 o C range; no other phases were detected during the transition. A clear change in composition and Raman spectra, as well as noticeable modifications of the band gap and the absorption coefficient confirmed the conversion from MoO2 to M… Show more

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Cited by 42 publications
(41 citation statements)
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References 29 publications
(43 reference statements)
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“…It is also evident that, at this calcination temperature, the intensity of the peak corresponding to NiO attenuated, while that of MoO 3 increased. This is reasonable since MoO 2 is stable in the temperature range of 225–350 °C, and in other studies, nanostructured MoO 3 has been found to exhibit stability between 230 °C and 490 °C [ 31 ]. The comparative analysis of the XRD patterns suggest that between 300 °C and 400 °C, a portion of MoO 2 changed to MoO 3 and reacted with NiO to produce NiMoO 4 .…”
Section: Resultssupporting
confidence: 76%
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“…It is also evident that, at this calcination temperature, the intensity of the peak corresponding to NiO attenuated, while that of MoO 3 increased. This is reasonable since MoO 2 is stable in the temperature range of 225–350 °C, and in other studies, nanostructured MoO 3 has been found to exhibit stability between 230 °C and 490 °C [ 31 ]. The comparative analysis of the XRD patterns suggest that between 300 °C and 400 °C, a portion of MoO 2 changed to MoO 3 and reacted with NiO to produce NiMoO 4 .…”
Section: Resultssupporting
confidence: 76%
“…The relatively small band gap of the material prepared at 300 °C is due to the significant presence of MoO 2 . Conflicting reports about the band gap of MoO 2 can be found in the literature, where some authors suggested that MoO 2 exhibits a metallic behavior, while other findings purported that this material conveys a mixed semi-conductive/metallic behavior [ 31 , 47 ]. However, reduced MoO 3 materials have been reported to attain a band gap between 2.4 and 2.7 eV, and recently Melo et al reported a value of 1.83 eV for pure MoO 2 [ 31 ].…”
Section: Resultsmentioning
confidence: 99%
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“…The reason could be the formation of Al 2 O 3 in the reaction of Al with O. The refractive index of alumina is lower than that of MoO 3 in the measured range of wavelengths [37][38][39], so the increase in the amount of Al 2 O 3 content in the film may reduce the total absorbance of the films, as observed experimentally. This is in agreement with the GIWAXS results that indicate formation of Al 2 O 3 in the Al-based films.…”
Section: Optical Properties Of the Filmsmentioning
confidence: 72%
“…To enhance the optical properties, materials with a greatest potential to be applied as an absorbing layer are the transition metal oxides (TMO’s) and among the most studied are molybdenum oxides (MoO x ) [ 12 ]. Depending on the desired applications, MoO x can be deposited or synthesized by physical or chemical techniques, respectively [ 13 ]. The deposition or synthesis techniques allow us to modify the characteristics of the oxide in order to enhance the desired properties according to the application [ 14 ].…”
Section: Introductionmentioning
confidence: 99%