Optical and electrical properties of modulation-doped n and p-type Ga x In1-x N y As1-y /GaAs quantum wells for 1.3 μm laser applications

Abstract

We present a comprehensive study of spectral photoluminescence (PL), photoconductivity and Hall mobility in undoped, n and p-type modulation-doped quantum wells of Ga 1−x In x N y As 1−y /GaAs with varying nitrogen concentration. We show that the increasing nitrogen composition red shifts the energy gap and this red shift is accompanied with a reduction of the 2D electron mobility in the quantum wells. True temperature dependence of the band gap, free from errors associated with nitrogen induced exciton trapping effects, is observed because in the modulation doped QW samples PL emission is dominated by bandto-band recombination and the S-shape temperature dependence is eliminated. Excellent fit to semi-experimental Varshni equation is obtained and the temperature dependence of the band gap in the linear regime (dE/dT) is tabulated as a function of nitrogen concentration and the type of dopant.

Electronic transport in n- and p-type modulation doped GaxIn1−xNyAs1−y/GaAs quantum wells

“…Therefore, the 70 meV difference between the peak energies in the two samples corresponds to the depth of the lowest lying defect states. (A detailed study of the photoluminescence from these samples is given elsewhere [12]. )…”

Energy and momentum relaxation dynamics of hot holes in modulation doped GaInNAs/GaAs quantum wells

“…16 Here, for clarity we showed in Fig. 2͑a͒ a typical PL spectrum measured at T = 68 K. The spectrum reveals the presence of two overlapping components, a strong narrow QW emission ͑FWHM ϳ 27 meV͒ located at 0.95 eV and a weak broad ͑FWHM ϳ 139 meV͒ 0.8 eV emission that may be associated with a transition from the arsenic interstitial-gallium vacancy ͑As i -V Ga ͒ defect center to the valence band in the p-doped GaAs layers as suggested by Yu and Shinohara.…”

“…Therefore, the observed behavior can reflect the true temperature dependence of band gap energy and be well fitted by an empirical relation between the band gap and temperature, as proposed by Polimeni et al 27 and Varshni, 28 and previously reported by us. 16,29 In order to determine the two-dimensional ͑2D͒ nature of the electrical conductivity, we employed the orthodox Hall measurements. The samples were fabricated in the form of Hall bars with channel lengths of 1.75 mm and widths of less than 0.2 mm.…”

“…Therefore, in material with relatively high nitrogen incorporation, the hole mobility can be higher than the electron mobility at low temperature because of both smaller effective mass and the lack of scattering by nitrogen complexes as observed in our previous studies. 16,17 The high hole mobility provides the motivation for the current work, i.e., to establish a full understanding of hole transport, particularly at high electric field for their potential application in ultrafast novel devices.…”

First principles study of structural, electronic and optical properties of indium gallium nitride arsenide lattice matched to gallium arsenide

“…The InGaNAs quaternary alloys are the key materials for the fabrication of diverse electronic and optoelectronic components, especially in vertical cavity emitting source above 1.28 μm [16], high performance laser diodes emitting at 1.3 and 1.55 μm optical fiber windows [17,18], visible light emitting diodes (LEDs) [19], photodetector operating at 1.3 μm [20], avalanche photodiodes at 1.064 μm [21], heterojunctions bipolar transistors (HBTs) [22] and high efficiency solar cells [23]. Extensive investigations on InGaNAs lattice matched to GaAs have been reported by various experimental methods [24][25][26].…”