Optical and electrical properties of thin films grown by spray pyrolysis

Khadraoui, M.; Benramdane, N.; Mathieu, C.; Bouzidi, A.; Miloua, R.; Kebbab, Z.; Sahraoui, K.; Desfeux, Rachel

doi:10.1016/j.ssc.2009.10.032

Cited by 70 publications

(30 citation statements)

References 15 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…5. We estimated that the E g value of the deposited thin films decreased from 2.12 to 2.03 eV with increase in deposition time from 20 to 24 h, which is in good agreement with the reported values [22,23]. Additionally, these values show that the direct band gap value of the deposited thin film depends on deposition time, the higher thickness the E g is lower as seen in Fig.…”

Section: Optical Propertiessupporting

confidence: 91%

Structural and optical studies of chemically deposited Sn2S3 thin films

Güneri

Göde

Boyarbay

et al. 2012

Materials Research Bulletin

View full text Add to dashboard Cite

Section: Optical Propertiessupporting

confidence: 91%

Structural and optical studies of chemically deposited Sn2S3 thin films

Güneri

Göde

Boyarbay

et al. 2012

Materials Research Bulletin

View full text Add to dashboard Cite

“…It is also observed that the peak intensity of the (2 1 1) plane is maximum for the film coated with the spraying solution having S:Sn molar concentration equal to 0.02:0.02, confirming its improved crystallinity. The growth along the (2 1 1) plane observed here exactly matches with the results reported by Khadraoui et al [3] for Sn 2 S 3 thin films prepared by spray pyrolysis technique. The lattice parameters of the Sn 2 S 3 films were calculated using the relation [13]:…”

Section: Methodssupporting

confidence: 91%

“…Sn 2 S 3 normally crystallizes in orthorhombic phase consisting of infinite double rutile strings of Sn IV S 6 octahedra parallel to the c-axis, with the Sn(II) atoms being attached laterally [2]. Sn 2 S 3 is a direct forbidden semiconductor which has a band gap between 0.95 eV and 2.2 eV [3]. The high anisotropic conductivity possessed by Sn 2 S 3 make it suitable for building photovoltaic p-n or p-i-n structures [4].…”

Section: Introductionmentioning

confidence: 99%

Optimization of S:Sn precursor molar concentration on the physical properties of spray deposited single phase Sn₂S₃thin films

Srivind¹,

Nagarethinam²,

Balu³

2016

Materials Science-Poland

View full text Add to dashboard Cite

Nanoneedle structured Sn 2 S 3 thin films were prepared by spray pyrolysis technique from aqueous solutions of tin (II) chloride and thiourea, keeping the molar concentrations of S:Sn = 0.01:0.01, 0.02:0.02, 0.03:0.03 and 0.04:0.04 in the starting solutions. XRD studies reveal that all the films exhibit orthorhombic crystal structure with a preferential orientation along the [2 1 1] direction. The peak intensity of the (2 1 1) plane is found to be maximum for the film coated with 0.02:0.02 S:Sn molar concentration which confirms the improved crystalline nature of this film. SEM images depict that the film coated with S:Sn molar concentration 0.02:0.02 exhibit needle shaped grains. The optical band gap exhibits red shift from 2.12 eV to 2.02 eV with an increase in S:Sn precursor molar concentration. Electrical studies show that the films having S:Sn molar concentrations 0.01:0.01 and 0.02:0.02 exhibit minimum resistivity values of 0.238 and 0.359 Ω·cm, respectively.

show abstract

“…• C. It is reported that Cu x S, Sn x S, and Zn x S have direct bandgap of 2.35 eV, 29 2.0 eV, 30 and 2.99 to 3.80 eV, 31 respectively, all of which are larger than that of CZTS. The insert in Fig.…”

Section: Resultsmentioning

confidence: 99%

Cu<sub>2</sub>ZnSnS<sub>4</sub> polycrystalline thin films with large densely packed grains prepared by sol-gel method

Jiang

Dhakal

et al. 2011

J. Photon. Energy

View full text Add to dashboard Cite

Abstract. Cu 2 ZnSnS 4 (CZTS) was obtained from a sol-gel precursor which consists of copper chloride, zinc chloride, tin chloride, and thiourea. CZTS thin films were prepared by spincoating the sol-gel precursor followed by annealing in a nitrogen atmosphere. The morphology, composition, and structure of the absorber layer were studied by scanning electron microscopy, energy dispersive spectroscopy, x-ray diffraction, and Raman scattering. The optical measurement shows the bandgap of these films is ∼1.51 eV, and the optical absorption coefficient is on the order of 10 4 cm −1 . CZTS solar cells with a structure of low-alkali glass/Mo/CZTS/CdS/iZnO/ZnO:Al/Al grid were tentatively fabricated. The best solar cell showed a short-circuit current density of 5.06 mA/cm2 , an open-circuit voltage of 358 mV, a fill factor of 34.66%, and an efficiency of 0.63% under AM1.5 (100 mW/cm 2 ) illumination. These results demonstrate the CZTS thin films were successfully deposited by a cheap sol-gel technique. C 2011 Society of Photo-Optical Instrumentation Engineers (SPIE).

show abstract

Optical and electrical properties of thin films grown by spray pyrolysis

Cited by 70 publications

References 15 publications

Structural and optical studies of chemically deposited Sn2S3 thin films

Structural and optical studies of chemically deposited Sn2S3 thin films

Optimization of S:Sn precursor molar concentration on the physical properties of spray deposited single phase Sn₂S₃thin films

Cu<sub>2</sub>ZnSnS<sub>4</sub> polycrystalline thin films with large densely packed grains prepared by sol-gel method

Contact Info

Product

Resources

About

Optical and electrical properties of thin films grown by spray pyrolysis

Cited by 70 publications

References 15 publications

Structural and optical studies of chemically deposited Sn2S3 thin films

Structural and optical studies of chemically deposited Sn2S3 thin films

Optimization of S:Sn precursor molar concentration on the physical properties of spray deposited single phase Sn2S3thin films

Cu<sub>2</sub>ZnSnS<sub>4</sub> polycrystalline thin films with large densely packed grains prepared by sol-gel method

Contact Info

Product

Resources

About

Optimization of S:Sn precursor molar concentration on the physical properties of spray deposited single phase Sn₂S₃thin films