Optical and Electrical Studies of the Double Acceptor Levels of the Mercury Vacancies in HgCdTe

Gemain, F.; Robin, I. C.; Brochen, Stéphane; Gravrand, O.; Lusson, A.

doi:10.1007/s11664-012-2104-8

Cited by 8 publications

(6 citation statements)

References 19 publications

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“…Shallow acceptors, including mercury vacancies, were investigated in recent photoluminescence (PL) studies of Hg 1−x Сd x Te with x=0.3-0.45 [24][25][26][34][35][36]. Mynbaev et al [35] studied the transformation of the PL spectra introduced by postgrowth annealing of MCT films.…”

Section: Introductionmentioning

confidence: 99%

Terahertz photoconductivity of double acceptors in narrow gap HgCdTe epitaxial films grown by molecular beam epitaxy on GaAs(013) and Si(013) substrates

Rumyantsev

Козлов

Morozov

et al. 2017

Semicond. Sci. Technol.

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The energy spectra of the mercury vacancy, the most common acceptor in HgCdTe material, is studied via numerical calculations and low temperature photoconductivity (PC) measurements of 'vacancy-doped' HgCdTe films with low cadmium content. Since the Hg vacancy is known to be a double acceptor, the model for the helium atom was adopted for degerate valence band of zinc blende semiconductors to classify the observed PC bands. This approach provides a fairly good description of the photoionization of both neutral and singly-ionized vacancy when the central cell potential is taken into account.

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Section: Introductionmentioning

confidence: 99%

Terahertz photoconductivity of double acceptors in narrow gap HgCdTe epitaxial films grown by molecular beam epitaxy on GaAs(013) and Si(013) substrates

Rumyantsev

Козлов

Morozov

et al. 2017

Semicond. Sci. Technol.

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“…The angles of the crosshatch patterns are determined by the crystal pattern of HgCdTe. HgCdTe has a zincblende structure with tetrahedral bond angles where each Hg or Cd atom is surrounded by 4 Te atoms (Gemain et al 2012). HgCdTe detectors are manufactured using molecular beam epitaxy upon a substrate, a process which can result in topological defects with peak-to-valley amplitudes of 5-20 nm in height variations (Chang et al 2008).…”

Section: Detector Temperature Fluctuationsmentioning

confidence: 99%

JWST Noise Floor II: Systematic Error Sources in JWST NIRCam Time Series

Schlawin,

Leisenring,

McElwain

et al. 2020

Preprint

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JWST holds great promise in characterizing atmospheres of transiting exoplanets, potentially providing insights into Earth-sized planets within the habitable zones of M dwarf host stars if photon-limited performance can be achieved. Here, we discuss the systematic error sources that are expected to be present in grism time series observations with the NIRCam instrument. We find that pointing jitter and high gain antenna moves on top of the detectors' subpixel crosshatch patterns will produce relatively small variations (less than 6 parts per million, ppm). The time-dependent aperture losses due to thermal instabilities in the optics can also be kept to below 2 ppm. To achieve these low noise sources, it is important to employ a sufficiently large (more than 1.1 arcseconds) extraction aperture. Persistence due to charge trapping will have a minor (less than 3 ppm) effect on time series 20 minutes into an exposure and is expected to play a much smaller role than it does for the HST WFC3 detectors. We expect temperature fluctuations to be less than 3 ppm. In total, our estimated noise floor from known systematic error sources is only 9 ppm per visit. We do however urge caution as unknown systematic error sources could be present in flight and will only be measurable on astrophysical sources like quiescent stars. We find that reciprocity failure may introduce a perennial instrument offset at the 40 ppm level, so corrections may be needed when stitching together a multi-instrument multi-observatory spectrum over wide wavelength ranges.

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“…It appeared, however, that this doping produced not only shallow, but also deep levels in the bandgap, and the latter acted detrimentally on the properties of photodetectors [7][8][9]. Also, the exact energy spectrum of vacancy-related levels in MCT remains a subject of discussion [10,11] as well as the effect of vacancy doping on the absorption edge and the cut-off wavelength of photodetectors [12]. As to the extrinsic doping, with the advent of MBE-grown heterostructures comprising very thin layers, traditional acceptor impurities for MCT, such as Au, Ag or Cu had to be abandoned due to their fast diffusivity related to the interstitial mechanism of propagation [6].…”

mentioning

confidence: 99%

“…The studies related to optical signatures of VHg were continued by Gemain et al [10,16]. To this end, the PL spectra of LPE-grown samples with x = 0.327 before annealing and after VF and PT annealings were compared.…”

mentioning

confidence: 99%

“…It was concluded that these peaks belonged to the transitions to the two acceptor levels of mercury vacancies, associated with their ionized states V − and neutral states V 0 . Gemain et al [10,16] calculated two ionization energies of VHg in undoped MCT as 10.7 meV and 27.3 meV, and to identify the states, they employed the Hall-effect data. Only one activation energy (26.2 meV) was found in the temperature-dependent Hall-effect measurements, which suggested, according to Gemain et al [10,16], that the mercury vacancy in MCT is a 'negative-U' defect with the ionized state having 10.7 meV energy and the neutral state of 27.3 meV (Fig.…”

mentioning

confidence: 99%

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Photoluminescence in Mercury Cadmium Telluride – a Historical Retrospective. Part II: 2004–2022

Ruzhevich¹,

Mynbaev²

2022

Rev. Adv. Mater. Technol.

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This review is a second part of the work that presents a historical retrospective of the studies of photoluminescence in mercury cadmium telluride (HgCdTe), one of the most important materials of infrared photo-electronics. The second part of the review considers the results of the studies performed in 2004–2022. These studies were carried out mostly on films grown by molecular beam epitaxy and focused on the investigation of defects, especially those originating in p-type doping with mercury vacancies or arsenic atoms. Compositional uniformity and alloy fluctuations in HgCdTe were also the subjects of the studies.

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Optical and Electrical Studies of the Double Acceptor Levels of the Mercury Vacancies in HgCdTe

Cited by 8 publications

References 19 publications

Terahertz photoconductivity of double acceptors in narrow gap HgCdTe epitaxial films grown by molecular beam epitaxy on GaAs(013) and Si(013) substrates

Terahertz photoconductivity of double acceptors in narrow gap HgCdTe epitaxial films grown by molecular beam epitaxy on GaAs(013) and Si(013) substrates

JWST Noise Floor II: Systematic Error Sources in JWST NIRCam Time Series

Photoluminescence in Mercury Cadmium Telluride – a Historical Retrospective. Part II: 2004–2022

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