Optical and EUV projection lithography: A computational view

Erdmann, Andreas; Fühner, Tim; Evanschitzky, Peter; Agudelo, Viviana; Freund, C.; Michalak, Przemysław; Xu, Dongbo

doi:10.1016/j.mee.2014.09.011

Cited by 29 publications

(10 citation statements)

References 151 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Where: CD is the resolution; 𝑘 1 is the process factor; λ is the central wavelength of the light source; NA is the numerical aperture. Where 𝑘 1 is related to the photoresist process, illumination coherence and control of the wavefront [5].…”

Section: Laser Projection Lithographymentioning

confidence: 99%

Research progress of laser lithography

Tian

2023

J. Phys.: Conf. Ser.

View full text Add to dashboard Cite

Lithography is one of the key technologies that restrict the development of the semiconductor industry and its important role continues to be highlighted. This paper will review laser projection lithography and laser maskless lithography based on the theoretical knowledge of laser lithography, present the advantages of laser maskless lithography, discuss the latest progress of laser lithography in application fields, explore its development prospects and trends, and provide some ideas and inspiration for the further development of human laser lithography. The result shows that laser lithography can be used in the field of material processing, and lithography is one of the key technologies to fabricate semiconductor devices. The world’s most advanced lithography machine is the EUV lithography machine of the Dutch ASML. This EUV lithography machine can be used for the production of 5nm chips, so 5nm is the most advanced chip manufacturing process that EUV lithography machine can achieve. Since lithography is a high degree of composite technology, each component plays an irreplaceable role. Therefore, if further improvements are to be made to the chip process, researchers should look at all parts of the exposure system, photoresist and process technology to make them work together in harmony.

show abstract

Section: Laser Projection Lithographymentioning

confidence: 99%

Research progress of laser lithography

Tian

2023

J. Phys.: Conf. Ser.

View full text Add to dashboard Cite

show abstract

“…Extreme ultraviolet lithography (EUVL) is a state-of-the-art technology used to produce semiconductor chips beyond the 10 nm node [1] with extremely short wavelength light sources (13.5 ± 0.135 nm). Among the critical technologies involved in EUVL, the development of an extreme violet light source is the most important one.…”

Section: Introductionmentioning

confidence: 99%

Simulation of Extreme Ultraviolet Radiation and Conversion Efficiency of Lithium Plasma in a Wide Range of Plasma Situations

Li,

Rosmej,

Chen

2024

Atoms

View full text Add to dashboard Cite

Based on the detailed term accounting approach, the relationship between extreme ultraviolet conversion efficiency and plasma conditions, which range from 5 to 200 eV for plasma temperature and from 4.63 × 1017 to 4.63 × 1022 cm−3 for plasma density, is studied for lithium plasmas through spectral simulations involving very extended atomic configurations, including a benchmark set of autoionizing states. The theoretical limit of the EUV conversion efficiency and its dependence on sustained plasma time are given for different plasma densities. The present study provides the necessary understanding of EUV formation from the perspective of atomic physics and also provides useful knowledge for improving EUV conversion efficiency with different technologies.

show abstract

“…[6][7][8] Currently, mask photolithography is widely employed for mass-volume device manufacturing. [9,10] However, it is difficult to meet the individual fabrication demands owing to the high mask cost. Fortunately, maskless lithography, such as electron beam lithography, [11,12] scanning probe lithography, [3,13] and direct laser writing, [14,15] has achieved tremendous development for the individual manufacture of optical elements, micro-electro-mechanical systems and electronic devices.…”

Section: Introductionmentioning

confidence: 99%

Ge₂Sb₂Te₅ Thin Film as a Promising Heat‐Mode Resist for High‐Resolution Direct Laser Writing Lithography

Chen

Sun

et al. 2023

Physica Rapid Research Ltrs

View full text Add to dashboard Cite

Ge2Sb2Te5 thin film is investigated as a positive heat‐mode resist and environmentally‐friendlily FeCl3 solution is as means an efficient developer. The corrosion selectivity of exposed to as‐deposited thin film reaches 2.3 and the etching selectivity of Si to Ge2Sb2Te5 thin film is as high as 15.75. Moreover, high‐resolution nanostructures with minimum linewidth of 180 nm and period of 400 nm are obtained along with high resolution of 130 nm. In addition, the mechanism of corrosion selectivity between as‐deposited and exposed thin film is further elucidated based on microstructural analysis. Hence, Ge2Sb2Te5 thin film is a promising positive resist for high‐resolution direct laser writing lithography.This article is protected by copyright. All rights reserved.

show abstract

Optical and EUV projection lithography: A computational view

Cited by 29 publications

References 151 publications

Research progress of laser lithography

Research progress of laser lithography

Simulation of Extreme Ultraviolet Radiation and Conversion Efficiency of Lithium Plasma in a Wide Range of Plasma Situations

Ge₂Sb₂Te₅ Thin Film as a Promising Heat‐Mode Resist for High‐Resolution Direct Laser Writing Lithography

Contact Info

Product

Resources

About

Optical and EUV projection lithography: A computational view

Cited by 29 publications

References 151 publications

Research progress of laser lithography

Research progress of laser lithography

Simulation of Extreme Ultraviolet Radiation and Conversion Efficiency of Lithium Plasma in a Wide Range of Plasma Situations

Ge2Sb2Te5 Thin Film as a Promising Heat‐Mode Resist for High‐Resolution Direct Laser Writing Lithography

Contact Info

Product

Resources

About

Ge₂Sb₂Te₅ Thin Film as a Promising Heat‐Mode Resist for High‐Resolution Direct Laser Writing Lithography