2007
DOI: 10.1063/1.2767992
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Optical and magnetic behavior of erbium-doped GaN epilayers grown by metal-organic chemical vapor deposition

Abstract: The authors report on the optical and magnetic properties of GaN epilayers, grown by metal-organic chemical vapor deposition, with in situ Er doping at concentrations up to ϳ10 21 cm −3. Using ultraviolet laser excitation, all samples exhibited photoluminescence near 1540 nm with the integrated intensity approximately proportional to the Er concentration. Data from superconducting quantum interference device measurements indicated room temperature ferromagnetic ordering in all Er-doped GaN epilayers. The satur… Show more

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Cited by 30 publications
(15 citation statements)
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“…Previous studies have been concentrated on Er doped III-nitride samples produced either by ion implantation or by in situ doping using molecular beam epitaxy ͑MBE͒. [10][11][12][13][14][15][16][17][18] Compared to ion implantation, in situ doping provides precise control of Er concentration and dopant position in the thin film. Electroluminescent devices have been fabricated from MBE grown materials and shown to emit at visible and IR wavelengths.…”
mentioning
confidence: 99%
“…Previous studies have been concentrated on Er doped III-nitride samples produced either by ion implantation or by in situ doping using molecular beam epitaxy ͑MBE͒. [10][11][12][13][14][15][16][17][18] Compared to ion implantation, in situ doping provides precise control of Er concentration and dopant position in the thin film. Electroluminescent devices have been fabricated from MBE grown materials and shown to emit at visible and IR wavelengths.…”
mentioning
confidence: 99%
“…[3][4][5][6][7][8][9][10][11][12] GaN and AlGaN epilayers doped with Er ions have demonstrated a highly reduced thermal quenching of the Er luminescence intensity from cryogenic to elevated temperatures, as compared to other semiconductor host materials such as Si and GaAs. Previous work has been concentrated on the optical property studies of Er dopants with samples doped either by ion implantation or by in situ doping using molecular beam epitaxy ͑MBE͒ growth technique.…”
mentioning
confidence: 99%
“…RE elements (such as Gd, Eu, Er, Dy) doped into wide band gap semiconductors lead to sharp emission lines from UV through the visible to the infrared because of 4f inner shell transition [2][3][4]. In the case of Gd, Eu and Er doped GaN, ferromagnetic properties are also indicated [2,4,5]. Therefore, RE-doped MQW structures are expected to be designed spin-polarized vertical-cavity surface-emitting laser (spin-VCSEL), which can be used in optical computing and reconfigurable optical interconnects.…”
Section: Introductionmentioning
confidence: 99%