Optical and Magnetic Properties of Ion Implanted Glasses

Photoluminescence and absorption in multi-energy Ge implanted type III silica

“…Here we will use these magnitudes without further calculations as indirect measures of the concentrations of defects present in each band. Calculation of concentrations of the various defects is not done because the oscillator strength of only one band, the E 0 center, is well established [31]. Shown in Fig.…”

New intrinsic oxygen related defect bands in oxygen implanted silica

“…There are at least three O related states, the ozone molecule [1], the peroxy radical (POR) [2,3], and the non-bridging oxygen hole center (NBOHC) [4] whose optical absorption bands, assumed to be ground state-first excited state transitions, are observed between 4.7 eV and 5.0 eV. Another band, observed at 3.8 eV, is attributed to a bridging oxygen molecule, ≡ Si-O-O-Si≡ in which the triple bars indicate bonds to three network oxygen ions [5].…”

“…A great deal of the long standing attribution of different defects to different absorption bands or regions of absorption to different defects is in part due to the relatively large full width at half maximum amplitude [FWHM] of various absorption bands of defects in silica (glass). In particular, there are numerous bands reported in the 4.8 eV [1][2][3][4]6,7], the 5.0-5.2 eV [2,3], and the 5.8 eV regions [5,[10][11][12][13] of the absorption spectra.…”

“…A number of absorption bands have been established as due to intrinsic point defect states in ion implanted, and gamma, neutron, electron, and proton irradiated silica [2,3,10,14]. Bands at 4.83 eV, 5.01 eV, 5.17 eV, 5.85 eV, 7.15 eV, 7.5 eV, and 7.6 eV have been confirmed to be intrinsic [2][3][4][7][8][9][15][16][17].…”

“…Bands at 4.83 eV, 5.01 eV, 5.17 eV, 5.85 eV, 7.15 eV, 7.5 eV, and 7.6 eV have been confirmed to be intrinsic [2][3][4][7][8][9][15][16][17]. By intrinsic, we mean that the bands are due to local configurations of Si and O that differ from the two-fold coordinated O and four-fold coordinated Si.…”