Abstract:Amorphous silicon carbonitride (a‐SiCxNy) thin films deposited on the SiO2 substrates by reactive magnetron sputtering was studied by Raman and electron paramagnetic resonance (EPR) spectroscopy. Raman analysis indicates the presence of C–N, Si–N, C–C bonds in a‐SiCxNy films. Three EPR signals were revealed in a‐SiCxNy/SiO2. One of them with g = 2.0033 was attributed to the carbon‐dangling bonds (CDB). Based on the lineshape and linewidth, the EPR signal was attributed to the unpaired electron delocalized over… Show more
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