Optical and morphological properties of<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:mrow><mml:mi mathvariant="normal">GaN</mml:mi></mml:mrow></mml:mrow></mml:math>quantum dots doped with<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:mrow><mml:mi mathvariant="normal">Tm</mml:mi></mml:mrow></mml:mrow></mml:math>

Andreev, Thomas; Hori, Yuichi; Biquard, X.; Monroy, E.; Jalabert, D.; Farchi, A.; Tanaka, Mitsuhiro; Oda, Osamu; Dang, Le Si; Daudin, B.

doi:10.1103/physrevb.71.115310

Cited by 27 publications

(13 citation statements)

References 25 publications

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“…Rare earth-doped GaN quantum dots (QDs) are a promising candidate for the realization of nitride-based white light emitting diodes: by combining the visible emission properties of rare earth ions with the confinement of carriers in QDs, it has been recently demonstrated that GaN QDs embedded in AlN exhibit intense red (Eu), blue (Tm) and green (Tb) cathodo-and photoluminescence at room temperature [1,2]. However, the practical realization of devices requires both n-and p-type doping of the barrier, discarding the possibility to use AlN.…”

Section: Introductionmentioning

confidence: 99%

Undoped and rare‐earth doped GaN quantum dots on AlGaN

Hori

Andreev

Thomas

et al. 2006

Physica Status Solidi (b)

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We study the self organized growth of GaN quantum dots deposited by molecular beam epitaxy on Al x Ga 1-x N, with x varying between 1 and 0.21. As a result of the specific strain relaxation mechanism of Al x Ga 1-x N on AlN, it is found that dots can be formed for an Al content as low as about 30%. Monopolar devices have been realized by depositing Schottky contacts on n-type doped Al 0.5 Ga 0.5 N. Finally, electroluminescence of Eu-doped GaN quantum dots embedded in n-type Al 0.5 Ga 0.5 N has been demonstrated, emphasizing the potentialities of such an active layer for room temperature visible light emission.

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Section: Introductionmentioning

confidence: 99%

Undoped and rare‐earth doped GaN quantum dots on AlGaN

Hori

Andreev

Thomas

et al. 2006

Physica Status Solidi (b)

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“…The surrounding Tm 3+ nitrogen ion is at a distance of 0.15 nm (the upper nitrogen in the c direction), and 0.18 nm for the lower three nitrogens. In AlN the distance between like atoms is 0.3112 nm, and 0.3092 nm [11,85]. The Tm-Al in AlN:Tm bond distances from EXAFS are always longer as compared to the undisturbed wurtzite structure [85].…”

mentioning

confidence: 96%

“…In AlN the distance between like atoms is 0.3112 nm, and 0.3092 nm [11,85]. The Tm-Al in AlN:Tm bond distances from EXAFS are always longer as compared to the undisturbed wurtzite structure [85]. Taking the free electron mass as the effective mass [57 (b)], the effective radii 1eff ρ are equal to 1.5 times the covalent radii for each RE ion from Table 1, and using the experimental quenching energies b CL ε (for the dimer), the potential-well depth V 0 was calculated.…”

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confidence: 99%

Thermal quenching of luminescence and isovalent trap model for rare‐earth‐ion‐doped AlN

Łożykowski¹,

Jadwisienczak

2007

Physica Status Solidi (b)

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Investigations of the luminescent properties of Pr-, Eu-, Tb-and Tm-implanted AlN thin films at temperature in the range 9 -830 K are reported. The temperature studies of photoluminescence and cathodoluminescence spectra revealed unexpectedly weak thermal quenching for all investigated rare earth (RE) ions. The maximum CL emission is observed from Eu (red) at 485 K, Tb (green) at 590 K and Tm (blue) at 530 K, respectively. For Tb-and Tm-doped AlN samples, temperature-dependent crossrelaxation processes were observed. Photoluminescence excitation spectra, obtained under UV excitation in the spectral range 200 -400 nm, exhibit several bands. It is proposed that the RE ions exist in semiconductors as isolated ions (singlet), nearest-neighbor (nn) ion pairs (dimer), and three ions (trimer). The Koster -Slater and simple spherical potential-well models for RE-structured isovalent (RESI) hole trap are proposed. The exciton binding energies of RESI traps are calculated and compared with experimental thermal-quenching energies. The energy-transfer processes between the AlN host and the 4f-shell systems are emphasized as the main mechanisms for thermal-quenching processes rather than nonradiative decay of 4f transitions.

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“…7 The incorporation of Tm inside QDs, on the other hand, was found to be difficult as it tends to be preferentially incorporated into the AlN spacer layers. 8,9 Furthermore, does the addition of RE during growth alter the growth kinetics influencing the two-dimensional/three-dimensional transition of the Stranski Krastanow process. 10 Ion implantation of pre-grown GaN QDs may circumvent these problems of RE incorporation.…”

Section: Introductionmentioning

confidence: 99%

Functionalizing self-assembled GaN quantum dot superlattices by Eu-implantation

Magalhães

Peres

Fellmann

et al. 2010

Journal of Applied Physics

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Self-assembled GaN quantum dots ͑QDs͒ stacked in superlattices ͑SL͒ with AlN spacer layers were implanted with Europium ions to fluences of 10 13 , 10 14 , and 10 15 cm −2 . The damage level introduced in the QDs by the implantation stays well below that of thick GaN epilayers. For the lowest fluence, the structural properties remain unchanged after implantation and annealing while for higher fluences the implantation damage causes an expansion of the SL in the ͓0001͔ direction which increases with implantation fluence and is only partly reversed after thermal annealing at 1000°C. Nevertheless, in all cases, the SL quality remains very good after implantation and annealing with Eu ions incorporated preferentially into near-substitutional cation sites. Eu 3+ optical activation is achieved after annealing in all samples. In the sample implanted with the lowest fluence, the Eu 3+ emission arises mainly from Eu incorporated inside the QDs while for the higher fluences only the emission from Eu inside the AlN-buffer, capping, and spacer layers is observed.

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Optical and morphological properties ofGaNquantum dots doped withTm

Cited by 27 publications

References 25 publications

Undoped and rare‐earth doped GaN quantum dots on AlGaN

Undoped and rare‐earth doped GaN quantum dots on AlGaN

Thermal quenching of luminescence and isovalent trap model for rare‐earth‐ion‐doped AlN

Functionalizing self-assembled GaN quantum dot superlattices by Eu-implantation

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