Optical and scintillation properties of Ce-doped LuLiF4 with different Ce concentrations

et al. 2018

Sensors and Materials

Self Cite

The optical and scintillation properties of undoped, Sb-doped, and Tl-doped Cs 2 CdCl 4 single crystals were investigated. We chose Sb 3+ and Tl + as the dopants of (ns) 2 -type electronic configurations. In the photoluminescence and scintillation spectra of undoped Cs 2 CdCl 4 , three emission peaks were observed. The scintillation decay-time constants were small (1.2 and 13 ns) and light yields were low (several tens of photons/MeV).

mentioning

confidence: 99%

Evaluation of Scintillation and Thermally Stimulated Luminescence Properties of Cs2CdCl4 Single Crystals

Sakai¹,

Koshimizu

et al. 2018

Sensors and Materials

Self Cite

“…X-ray induced radioluminescence spectra was evaluated by using our original setup [17][18]. The excitation source was an X-ray generator supplied with 80 kV bias voltage and 2.5 mA tube current.…”

Section: Methodsmentioning

confidence: 99%

Evaluation of Scintillation Properties of GaN

Yanagida

e-J. Surf. Sci. Nanotechnol.

Koshimizu

2014

Self Cite

Optical and scintillation properties of GaN crystalline film were investigated. It showed 30-50% in-line transmittance at wavelength longer than 400 nm and intense emission appeared at 365 nm under 213 nm excitation in photoluminescence (PL) spectrum. When PL decay time was investigated under 280 and 200 nm excitation, luminescence decay time resulted few ns. In X-ray induced radioluminescence spectra, intense emission appeared at 365, 420, and 550 nm. The former one was ascribed to the exciton emission and the latter two would be due to defects related emission. Scintillation decay time of GaN was quite fast as few ns which was consistent with PL results and no slow component was observed.

“…In order to evaluate scintillation decay time, pulse X-ray streak camera system was used [21][22]. Scintillation light yield was evaluated by our standard setup [23][24][25][26][27]. The used PMT was a VUV sensitive type, R8778 (Hamamatsu).…”

Section: Methodsmentioning

confidence: 99%

Study of vacuum ultraviolet scintillation in rare earth doped Lutetium fluoride

Fukuda

Yanagida

2013 IEEE Nuclear Science Symposium and Medical Imaging Conference (2013 NSS/MIC)

et al. 2013

Single crystalline LuF 3 doped with Nd 3+ , Er 3+ , and Tm 3+ were synthesized by Tokuyama Corp. aiming to apply VUV emitting scintillators. In X-ray induced radioluminescence, they exhibited VUV luminescence at 160-180 nm due to 5d-4f transitions. Among them, Nd-doped one showed the highest scintillation light yield of ~ 1000 ph/MeV when irradiated by 137 Cs γ-rays. The scintillation decay time of Nd-doped LuF3 resulted quite fast 7.6 ns.