“…The refractive index modification occurs at the focal point of the high-energy pulses and in the ion-implanted region for femtosecond laser writing and focused proton beam writing, respectively. He + ion implantation [99], ion exchange [118,119,123,125,130,136,144,146,148,149,[198][199][200], and ion indiffusion [34,81] are also used to alter the local refractive index through photolithography and patterning over a large wafer area. Typically, the index change which results from these methods is on the order of 1¢10 3 to 1¢10 2 .…”