Optical and structural analysis of ZnS core-shell type nanowires

Ramos, Juan Ramon; Morales, C.; García, Gregorio Gómez-Jarabo; Díaz, T.; Rosendo, E.; Santoyo, J.; Oliva, A.I.; Galeazzi, R.

doi:10.1016/j.jallcom.2017.11.087

Cited by 8 publications

(3 citation statements)

References 31 publications

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“…This technique has been used to grow a wide variety of films, including diamond [18], as well as amorphous silicon nitride [19,20], semiconductor compounds [21], and more. Recently, the technique has been used to grow several nanostructures of different materials, such as silicon-rich oxides [22], nanocrystalline silicon [23], graphene [24], molybdenum selenide [25], silicon carbide [26], and zinc sulfide [27] among others, for applications in new or improved devices, such as solar cells, sensors, and metal oxide semiconductors (MOS) structures [18,23]. HFCVD technology is compatible with the current silicon-based technology, and it has advantages over other methods because it can produce materials at low cost, and on a wide substrate surface.…”

Section: Introductionmentioning

confidence: 99%

Highly Visible Photoluminescence from Ta-Doped Structures of ZnO Films Grown by HFCVD

et al. 2018

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Tantalum-doped ZnO structures (ZnO:Ta) were synthesized, and some of their characteristics were studied. ZnO material was deposited on silicon substrates by using a hot filament chemical vapor deposition (HFCVD) reactor. The raw materials were a pellet made of a mixture of ZnO and Ta2O5 powders, and molecular hydrogen was used as a reactant gas. The percentage of tantalum varied from 0 to 500 mg by varying the percentages of tantalum oxide in the mixture of the pellet source, by holding a fixed amount of 500 mg of ZnO in all experiments. X-ray diffractograms confirmed the presence of zinc oxide in the wurtzite phase, and metallic zinc with a hexagonal structure, and no other phase was detected. Displacements to lower angles of reflection peaks, compared with those from samples without doping, were interpreted as the inclusion of the Ta atoms in the matrix of the ZnO. This fact was confirmed by energy dispersive X-ray spectrometry (EDS), and X-ray diffraction (XRD) measurements. From scanning electron microscopy (SEM) images from undoped samples, mostly micro-sized semi-spherical structures were seen, while doped samples displayed a trend to grow as nanocrystalline rods. The presence of tantalum during the synthesis affected the growth direction. Green photoluminescence was observed by the naked eye when Ta-doped samples were illuminated by ultraviolet radiation and confirmed by photoluminescence (PL) spectra. The PL intensity on the Ta-doped ZnO increased from those undoped samples up to eight times.

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Section: Introductionmentioning

confidence: 99%

Highly Visible Photoluminescence from Ta-Doped Structures of ZnO Films Grown by HFCVD

et al. 2018

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“…The deposit of semiconductor materials using the hot filament chemical vapor deposition (HFCVD) technique is widely reported [ 21 , 23 , 24 , 25 , 26 , 27 ]. The material of the filament, used in the experimental arrangement, is selected to reach temperatures of about 2000 °C, usually tungsten, molybdenum, or tantalum.…”

Section: Methodsmentioning

confidence: 99%

“…The hot filament chemical deposition (HFVCD) technique allows the deposit of semiconductor materials with high deposition rates, low operation cost, and good control of the experimental conditions. HFCVD technique has been used to deposit a wide variety of materials including diamond [ 18 ], aluminum, silicon, and titanium nitride [ 19 ], gallium nitride [ 20 ], nanostructures of silicon-rich [ 21 ], nanocrystalline silicon [ 22 ], graphene [ 23 ], molybdenum selenide [ 24 ], silicon carbide [ 25 ], and zinc sulfide [ 26 ], among others.…”

Section: Introductionmentioning

confidence: 99%

Effect of the Deposit Temperature of ZnO Doped with Ni by HFCVD

et al. 2023

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The effect of the deposit temperature of zinc oxide (ZnO) doped with nickel (Ni) by hot filament chemical vapor deposition (HFCVD) technique is reported in this work. The technique allows depositing ZnO:Ni in short intervals (1 min). A deposit of undoped ZnO is used as a reference sample. The reference sample was deposited at 500 °C. The ZnO:Ni samples were deposited at 500 °C, 400 °C, 350 °C, and 300 °C. The samples were studied using structural, morphological, and optical characterization techniques. The Ni incorporation to the ZnO lattice was verified by the shift of the X-ray diffraction peaks, the Raman peaks, the band gap, and the photoluminescence measurements. It was found that the deposit temperature affects the structural, morphological, and optical properties of the ZnO:Ni samples too. The structure of the ZnO:Ni samples corresponds to the hexagonal structure. Different microstructures shapes such as spheres, sea urchins, and agglomerate were found in samples; their change is attributed to the deposit temperature variation. The intensity of the photoluminescence of the ZnO:Ni improves concerning the ZnO due to the Ni incorporation, but it decreases as the deposit temperature decreases.

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Defect engineering of zeolite imidazole framework derived ZnS nanosheets towards enhanced visible light driven photocatalytic hydrogen production

Zhou

Zhao

2020

Applied Catalysis B: Environmental

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Optical and structural analysis of ZnS core-shell type nanowires

Cited by 8 publications

References 31 publications

Highly Visible Photoluminescence from Ta-Doped Structures of ZnO Films Grown by HFCVD

Highly Visible Photoluminescence from Ta-Doped Structures of ZnO Films Grown by HFCVD

Effect of the Deposit Temperature of ZnO Doped with Ni by HFCVD

Defect engineering of zeolite imidazole framework derived ZnS nanosheets towards enhanced visible light driven photocatalytic hydrogen production

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