Optical and Structural Characterization of Fluorine-Doped SnO2 Thin Films Prepared by Spray Ultrasonic

The aim of this work is the production and the characterisation of (SnO2: (Mn, F)) thin films with appropriate optoelectronic properties required for application as ohmic contacts in photovoltaic application devices. Transparent conducting Manganese-fluorine co-doped tin oxide (SnO2: (Mn, F)) thin films have been deposited onto preheated glass substrates using the chemical spray pyrolysis (CSP) method. The ([Mn2+]/[Sn4+]) atomic concentration ratio (y) in the spray solution is varied between 0 and 8 at. %. The structural, the opto-electrical and the photoluminescence properties of these thin films have been studied. It is found that the deposited thin films are polycrystalline with a tetragonal crystal structure corresponding to SnO2 phase having a preferred orientation along the (200) plane. Transmission and reflection spectra reveal the presence of interference fringes indicating the thickness uniformity and the surface homogeneity of the deposited samples. Photoluminescence behaviour of Mn-F co-doped SnO2 thin films was also studied. Photoluminescence spectra reveal the presence of the defects like oxygen vacancies in the materials. In addition, The electrical resistivity, volume carrier concentration, surface carrier concentration and electrical mobility were determined from Hall Effect measurements and the following results were obtained: n-type conductivity in all the deposited thin films, a low resistivity of 1.50×10-4 Ω cm, and a high electrical mobility of 45.40 cm2 V-1 s-1 with Mn co-doping concentration equals to 7 at. %. These experimental results show that the electrical properties of these thin films where greatly improved making them suitable as ohmic contacts in photovoltaic applications devices.

“…The estimated band gap energy values are indicated in Table 2. These obtained results of SnO2: (Mn, F) thin films are in good agreement with the literature [8,15,17,21] .…”

Section: Energy Band Gap (Eg)supporting

confidence: 92%

Section: Introductionmentioning

confidence: 99%

Study of Mn doping on the Structural, Optoelectronic and Photoluminescence Properties of F-Doped SnO2 Sprayed Thin Films for Optoelectronic Applications

Houaidji¹,

Ajili

Chouial³

et al. 2020

“…5) and it is in the range 3.68-3.84 eV. The obtained optical band gap values of SnO2: (Co, F) thin layers in the present work are in good agreement with the reported values in the literature [8,15,20,29] .…”

Section: Optical Propertiessupporting

confidence: 92%

“…In addition, it has a high reflectivity in the infrared region and it can be used as gas sensors [1,15,16] . Several deposition techniques have been used to prepare TCO thin films, including sol gel [1] , pulsed laser deposition (PLD) [14] , Magnetron sputtering [12,15] , electro spinning [17] and chemical spray pyrolysis (CSP)method [18][19][20][21][22] . Among these methods, CSP is very simple technique and has been used for the deposition of dense and porous films.…”

Section: Introductionmentioning

confidence: 99%

Optoelectronic Properties of Fluorine and Cobalt Co-Doped Tin Oxide Thin Films Deposited by Chemical Spray Pyrolysis

Houaidji¹,

Ajili

Chouial³

et al. 2019

Transparent conducting Cobalt-fluorine co-doped tin oxide (SnO2: (Co, F)) thin filmswere deposited onto preheated glass substrates using the chemical spray pyrolysis method. The ([Co2+]/[Sn4+]) atomic concentration ratio (y)in the spray solution was varied between 0 and 5 at. %. The structural, electrical, optical and photoluminescence properties of these films were studied. It is found that the thin films are polycrystalline with a tetragonal crystal structure corresponding to SnO2 phase having a preferred orientation along the (200) plane. Transmission and reflection spectra reveal the presence of interference fringes indicating thickness uniformity and surface homogeneity of the deposited thin films. The electrical resistivity (ρ), volume carrier concentration density (Nv), surface carrier concentration density (Ns) and Hall mobility (μ) of the synthesized thin films were determined from the Hall Effect measurements in the Van der Paw-configuration and the following results were obtained: n-type conductivity in all deposited films, a low resistivity of 1.16×10-2 Ω.cm, and a high Hall mobility of 15.13×102 cm2.V-1.s-1with Co concentration equals to 3 at. %. These results show that the electrical properties of these thin films where greatly improved making them suitable as ohmic contact in photovoltaic application devices.

“…The mean crystallite size (D) of SnS2 thin films for the peak with the highest intensity (peaks along (001) plane) can be estimated by using the Debye-Scherrer formula [30].…”

Section: Debye-scherrer Analysismentioning

confidence: 99%

Study of Substrate Temperatures Effects on the Properties of Ultrasonically Sprayed SnS2 Thin Films

Hadef¹,

Kamli²,

Zaidi

et al. 2023

Tin disulfide (SnS2) thin films have drawn worldwide attention because of their outstanding performance and earth-abundant constituents. However, problems such as coexistence of complex secondary phases (SnS, Sn2S3), the band tailing issue, and bulk defects need to be addressed for further efficiency improvement. In this regard, the present work is intended for the treatment of one of these problems. Herein, a single phase SnS2 has been obtained using an ultrasonic spray pyrolysis method. which is confirmed by X-ray diffraction (XRD) and energy dispersive X-rays (EDXs) characterization techniques. The substrate temperatures (Ts) were increased from 250 °C to 450 °C, and this significantly improved the film's characteristics, which varied from an amorphous phase and a mixture of crystalline phases, SnS2 and SnS (for the films obtained at Ts = 250 and 300 °C) to a SnS2 pure phase with a hexagonal structure (for Ts ≥ 350 °C). The morphological, optical, and electrical properties of SnS2 films are greatly improved by temperature increases too, especially for the film obtained at 450 °C. This suggests that there are opportunities for further efficiency by using the as-deposited SnS2 thin film at 450 °C.