2006
DOI: 10.1016/j.sna.2005.11.065
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Optical and structural characterization of ZnO thin films and fabrication of bulk acoustic wave resonator (BAW) for the realization of gas sensors by stacking ZnO thin layers fabricated by e-beam evaporation and rf magnetron sputtering techniques

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Cited by 27 publications
(7 citation statements)
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“…Of them, the peak at about 102 cm −1 is assigned to the E 2 low-frequency branch [E 2 (low)] and that at about 437 cm −1 to the E 2 high-frequency branch [E 2 (high)], associated with oxygen and Zn sublattices, respectively. They are the characteristic modes of ZnO as expected from the Raman selection rules in wurtzite crystal structure. The Raman band corresponding to the longitudinal optical (LO) mode with A 1 symmetry usually appears near 574 cm −1 . , The LO mode is, however, actually composed of A 1 LO (574 cm −1 ) mode and E 1 LO (583 cm −1 ) mode from polarization fields parallel and perpendicular to the c axis, respectively. , For our nc-ZnO thin films, the Raman band corresponding to the E 1 LO mode centers at 583 cm −1 . The appearance of the above characteristic Raman peaks indicates the wurtzite phase of the prepared nc-ZnO films.…”
Section: Resultsmentioning
confidence: 73%
“…Of them, the peak at about 102 cm −1 is assigned to the E 2 low-frequency branch [E 2 (low)] and that at about 437 cm −1 to the E 2 high-frequency branch [E 2 (high)], associated with oxygen and Zn sublattices, respectively. They are the characteristic modes of ZnO as expected from the Raman selection rules in wurtzite crystal structure. The Raman band corresponding to the longitudinal optical (LO) mode with A 1 symmetry usually appears near 574 cm −1 . , The LO mode is, however, actually composed of A 1 LO (574 cm −1 ) mode and E 1 LO (583 cm −1 ) mode from polarization fields parallel and perpendicular to the c axis, respectively. , For our nc-ZnO thin films, the Raman band corresponding to the E 1 LO mode centers at 583 cm −1 . The appearance of the above characteristic Raman peaks indicates the wurtzite phase of the prepared nc-ZnO films.…”
Section: Resultsmentioning
confidence: 73%
“…Those properties are already used in emerging applications for transparent electrodes in liquid crystal displays, energy-saving or heat-protecting windows, thin-film transistor and lightemitting diode. ZnO is promising material for electronics and optoelectronic application such as solar cells [1] , gas sensors [2] , UV photo detectors [3] heat mirrors , wave devices and bulk acoustic wave resonators [4] etc. In this work, simple, low-cost technique is the chemical bath deposition (CBD) method to deposit ZnO nanoparticle thin films on the glass substrates has been investigated.…”
Section: Introductionmentioning
confidence: 99%
“…In literature, many methods have been reported to deposit ZnO and AlN films including physical vapor deposition (PVD), such as sputtering, [54][55][56] evaporation, [57] pulsed laser deposition (PLD), [58,59] molecular beam epitaxy (MBE), [60,61] chemical vapor deposition (CVD). [62,63] Different deposition processes lead to different crystalline quality, temperature, costs, and rates of deposition.…”
Section: Processing Of Piezoelectric Materials For Polymeric Saw Devicesmentioning
confidence: 99%