Optical and structural properties of nanocrystalline PbS thin film grown by CBD on Si(1 0 0) substrate

Tohidi, Tavakkol; Jamshidi‐Ghaleh, Kazem

doi:10.1080/14786435.2014.959579

Cited by 11 publications

(4 citation statements)

References 46 publications

(63 reference statements)

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“…4(a)) corresponds to higher energy band transi-tions [29,30]. Similar luminescence was measured on PbS nano-cubes and thin films in other works by Cao et al [31] and Tohidi et al [32]. The inset of Fig.…”

Section: Resultssupporting

confidence: 82%

Towards metal chalcogenide nanowire-based colour-sensitive photodetectors

et al. 2018

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In recent years, nanowires have been shown to exhibit high photosensitivities, and, therefore are of interest in a variety of optoelectronic applications, for example, colour-sensitive photodetectors. In this study, we fabricated two-terminal PbS, In2S3, CdS and ZnSe single-nanowire photoresistor devices and tested applicability of these materials under the same conditions for colour-sensitive (405 nm, 532 nm and 660 nm) light detection. Nanowires were grown via atmospheric pressure chemical vapour transport method, their structure and morphology were characterized by scanning and transmission electron microscopy (SEM and TEM), X-ray diffraction (XRD), and optical properties were investigated with photoluminescence (PL) measurements. Single-nanowire photoresistors were fabricated via in situ nanomanipulations inside SEM, using focused ion beam (FIB) cutting and electron-beam-assisted platinum welding; their current-voltage characteristics and photoresponse values were measured. Applicability of the tested nanowire materials for colour-sensitive light detection is discussed.

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Section: Resultssupporting

confidence: 82%

Towards metal chalcogenide nanowire-based colour-sensitive photodetectors

et al. 2018

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“…The strong peak observed at 580 nm corresponds to green emission. Recently, Cao et al and Tohidi et al observed the emission peaks at around 440 nm using the excited wavelength 330 nm for PbS thin films. They addressed that the observed PL emission at approximately 440 nm signifies the electrons transition from the conduction band edge to holes, present in interstitial Pb 2+ sites.…”

Section: Resultsmentioning

confidence: 99%

Ag‐doped PbS thin films by nebulizer spray pyrolysis for solar cells

Rosario¹,

Kulandaisamy²,

Kumar

et al. 2020

Int J Energy Res

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Summary Silver (Ag)‐doped PbS (PbS:Ag) thin films of 616 to 745 nm in thickness were prepared on glass substrates via cost‐effective nebulizer spray method by adding different Ag levels from 2% to 8% at 200°C. For solar cell applications, the effect of Ag doping concentration on structural, morphological, optical, photoluminescence, and electrical chattels of PbS thin film has been studied. X‐ray diffraction pattern confirmed the polycrystalline behavior of the prepared PbS:Ag films with cubic crystalline nature. The crystalline size and texture coefficient were increased by increasing Ag doping concentration. From the morphological studies by scanning electron microscope (SEM) and atomic force microscope (AFM), the grain size of the films and surface roughness values were increased for the increase in Ag doping concentration. EDS spectra confirmed the existence of Ag, Pb, and S elements in the select 6% Ag‐doped PbS film. Peaks related to silver oxide started to emerge at 6% of Ag doping level. The optical direct band gap value was reduced from 1.51 to 1.17 eV for Ag doping from 2% to 6% and thereby slightly increased as 1.79 eV for 8% Ag doping level. For all PbS:Ag films, the photoluminescence spectrum emitted a strong near band edge (NBE) emission at approximately 580 nm, meaning better optical quality. Hall effect measurements evidenced that Ag doping provides enhancement on the characteristics of mobility, carrier concentration, and resistivity with p‐type conducting nature. The observed high carrier concentration and low resistivity values were 4.32 × 1014 cm−3 and 80 Ωcm, for 6% Ag‐doped PbS film. The FTO/CdS/PbS:Ag heterostructure solar cell was formed from 6% Ag‐doped film.

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“…As the crystalline size decreases, the amount of ions quickly increases on the surface of the thin film. Moreover, the rate of carrier recombination increases as the size decrease because of the increase in overlap between the electron and hole wave functions …”

Section: Resultsmentioning

confidence: 99%

Band gap tailoring of chemically synthesized lead sulfide thin films by in situ Sn doping

Hone

Dejene

Echendu

2018

Surface & Interface Analysis

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In the present report, undoped and tin (Sn)-doped lead sulfide thin films were synthesized via chemical bath deposition method. The effects of Sn molar concentration on the optical, structural, and morphological properties were systematically studied. The concentration of Sn in the chemical bath was characterized by the ratio of [Sn +2 ]/[Pb +2 ] and varied from 0 to 15 at.%. Both doped and undoped thin films were polycrystalline in nature with a face-centered cubic crystal structure; however, the preferred orientations of the crystallites were varied along the (111) and (200) planes with Sn-doping concentration. The X-ray powder diffraction results also showed that peak intensities and the crystalline size were decreased with increasing Sn concentration.The lattice constant varied with Sn concentration and found in the range of 6.020 to 5.944 Å. The variation of Sn concentration in PbS:Sn thin films were confirmed by energy dispersive X-ray analyses study. The scanning electron microscope and atomic force microscopy studies revealed that Sn doping had a critical role on the surface roughness and morphology of the PbS:Sn thin films. The optical band gap study showed that the band gap of PbS:Sn thin films were engineered from 0.676 to 1.345 eV because of incorporation of Sn +2 ions via cost-effective chemical route.Room temperature photoluminescence spectra showed a well-defined peak at 427 nm and shoulders at 405 and 462 nm for all Sn-doped and undoped PbS samples.

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Optical and structural properties of nanocrystalline PbS thin film grown by CBD on Si(1 0 0) substrate

Cited by 11 publications

References 46 publications

Towards metal chalcogenide nanowire-based colour-sensitive photodetectors

Towards metal chalcogenide nanowire-based colour-sensitive photodetectors

Ag‐doped PbS thin films by nebulizer spray pyrolysis for solar cells

Band gap tailoring of chemically synthesized lead sulfide thin films by in situ Sn doping

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