2007
DOI: 10.1007/s00339-007-3953-5
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Optical and structural properties of MgZnO/ZnO hetero- and double heterostructures grown by pulsed laser deposition

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Cited by 33 publications
(17 citation statements)
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“…In addition to the growth characteristics [3][4][5][6][7][8][9], the growth behavior of Zn 0.8 Mg 0.2 O/ZnO QW structure grown on r-plane sapphire is also reported.…”
Section: Introductionmentioning
confidence: 99%
“…In addition to the growth characteristics [3][4][5][6][7][8][9], the growth behavior of Zn 0.8 Mg 0.2 O/ZnO QW structure grown on r-plane sapphire is also reported.…”
Section: Introductionmentioning
confidence: 99%
“…6 summarizes the optical bandgap variation as a function of Mg content derived from the excitonic PL signatures along with similar data reported by Heitsch et al [24] and Park et al [25] for comparison. Our results indicate that linear broadening of the bandgap upon Mg incorporation results, which is similar to literature reports [24,25]. The different slopes of the dependencies presented in Fig.…”
Section: Resultsmentioning
confidence: 88%
“…Thus, employment of a weaker oxidant may provide a better control of the Mg incorporation. Moreover there is a puzzling discrepancy when correlating compositions and properties in MgZnO as reported in literature [21][22][23][24][25], which may be attributed to insufficient accuracy of the chemical analysis and/or to possible fluctuations in Zn/ Mg contents in the films as a function of depth. As such, more accurate film composition determination ensures better understanding of the alloying effects when tailoring specific optoelectronic properties.…”
Section: Introductionmentioning
confidence: 76%
“…In ZnO, many different growth morphologies can occur, including: nanobelts, nanowires, nanocages, nanocombs, nanorings, nanosprings, and nanohelices [13]. However, it is only recently, with improved control over growth conditions, that high quality two-dimensional epitaxial layers have been able to be grown, opening the door to the growth of ZnO based quantum wells (QWs) [14][15][16][17]. In most cases the barrier material is Zn 1−x Mg x O, where the band gap is given by 3.37+2.51x [18] with band offsets relative to the valence (E v ) and conduction (E c ) bands for ZnO of ΔE c /ΔE v = 70/30 [19].…”
Section: Introductionmentioning
confidence: 99%