2006
DOI: 10.1016/j.tsf.2005.12.055
|View full text |Cite
|
Sign up to set email alerts
|

Optical and structural properties of FeSe2 thin films obtained by selenization of sprayed amorphous iron oxide films

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
4
1

Citation Types

0
19
1

Year Published

2008
2008
2021
2021

Publication Types

Select...
9

Relationship

0
9

Authors

Journals

citations
Cited by 36 publications
(20 citation statements)
references
References 8 publications
0
19
1
Order By: Relevance
“…The band gap was found to be 2.75 eV for spray deposited FeSe film. This is higher than the value reported by other investigators [8,9].…”
Section: Resultscontrasting
confidence: 66%
“…The band gap was found to be 2.75 eV for spray deposited FeSe film. This is higher than the value reported by other investigators [8,9].…”
Section: Resultscontrasting
confidence: 66%
“…[4,5] Among these inorganic materials, FeSe 2 with a direct band gap of 1.0 eV has been regarded as a promising candidate for solar cells and for detecting visible radiation. [6][7][8][9] Moreover, FeSe 2 is considered a less toxic and more environmentally friendly semiconductor. In addition, threedimensional flower-like micro/nanostructures have been reported to exhibit unique properties and have potential applications in the fields of transistors, superconductors, photodetectors, solar cells and lithium ion batteries.…”
Section: Introductionmentioning
confidence: 99%
“…Selenization of iron thin films is an usual route to fabricate Fe-Se compounds thin films. However, it usually obtains non-oriented thin films, even mixtures of more than two Fe-Se compounds [5][6][7][8]. The unsatisfactory crystal quality limits the study on Fe-Se compounds within composition analysis and structure characterization, and accordingly restricts the research on optical, electrical properties.…”
Section: Introductionmentioning
confidence: 99%