Optical and structural properties of polycrystalline CdSe deposited on titanium substrates

Cerdeira, F.; Torriani, Iris Concepcion Linares de; Motisuke, P.; Lemos, V.; Decker, F.

doi:10.1007/bf00615917

Cited by 50 publications

(26 citation statements)

References 19 publications

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“…The CdSe thin films have been electrodeposited for some time from selenosulfate solutions [77] and a Cd/Se ratio close to 1 was demonstrated [78]. The CdSe films electrodeposited on titanium substrates were characterized using a number of techniques, including photoluminescence, Raman scattering, and XRD [79].…”

Section: Cadmium Selenide (Cdse)mentioning

confidence: 99%

Electrodeposition of Semiconductors

Schlesinger

Rajeshwar

2010

Modern Electroplating

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Section: Cadmium Selenide (Cdse)mentioning

confidence: 99%

Electrodeposition of Semiconductors

Schlesinger

Rajeshwar

2010

Modern Electroplating

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“…For these growing conditions, the obtained cubic CdSe (CAS registry number [1306-24-7]) is characterized as metastable, and converts to wurtzite hexagonal structure after annealing at 650°C for 15 min in an inert atmosphere [1], [19], [20]. However, in this work, for the produced electrolytic deposits this crystallographic transformation was not noticed after annealing.…”

Section: Xrd Characterizationmentioning

confidence: 69%

“…The cubic structure is metastable [1] and can be transformed to the hexagonal wurtzite structure following an annealing process [2], [3]. Film deposits of CdSe can be used for the production of economical photovoltaic cells due to offered heterostructure formations [4], spectrum sensitivity, and energy-gap value (1.74 eV) [5].…”

Section: Introductionmentioning

confidence: 99%

Electrolytically deposited Cadmium Selenide Films for Photovoltaic Applications

Dervos

Palaiologopoulou

2012

EPJ Web of Conferences

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Abstract. CdSe films were electrodeposited on pure nickel substrates. The nickel substrate was polished to a mirror finish by Al 2 O 3 paste, etched in 10% HCl solution for 40 s and rinsed thoroughly by de-ionized water. The deposition bath contained solutions with excessive Cd 2+ (0.2M) from CdSO 4 and small amounts of SeO 2 (1x10 -3 M). The pH of the bath was adjusted to a value of 2.2 at RT by adding 10% H 2 SO 4 . The bath was first thermostated at the required temperature, which varied from 55°C to 65°C. Plating was accomplished at deposition potential 1000 mV (vs. Hg/Hg 2 SO 4 ). The films formed had a uniform thickness and it was found to be approximately 2.0 µm thick (for 20 min electrodeposition process. The produced CdSe films were characterized by X-Ray diffraction and SEM. The induced semiconductor doping effect by thermal annealing in pure dry nitrogen gas was also investigated. Gold contacts were placed on top of the CdSe films, either by evaporation, or mechanically. Depending on the deposition parameters the electrical characteristics of the Ni/CdSe/Au structures may exhibit rectification properties. The optical excitation of the structure was investigated for various CdSe thicknesses.

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“…CdSe thin films can be obtained by different techniques such as chemical [4], photochemical [5] and electrochemical vapor deposition [6,7], electron-beam [8], magnetron [9] and thermal [10][11][12][13][14] evaporation in vacuum, laser ablation [15] and close-spaced vacuum sublimation (CSVS) [16,17]. Hexagonal cadmium selenide nanorods were grown by a solvothermal technique [18].…”

Section: Introductionmentioning

confidence: 99%

Study of the correlation between structural and photoluminescence properties of CdSe thin films deposited by close-spaced vacuum sublimation

Gnatenko

Opanasyuk

Ivashchenko

et al. 2014

Materials Science in Semiconductor Processing

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a b s t r a c tCdSe polycrystalline films were deposited by a close-spaced vacuum sublimation method at different substrate temperatures (T s ) using glass slides as substrates. At T s r 673 K the films have a structure with strong dispersion of grain size (d) (from 0.1 to 0.3 μm). In this case the layer-by-layer mechanism determines the growth process of the layers. For ) is considerably smaller than for the films deposited at Т s ¼773 K (4.0 Â 10 À 3 ). Increase of the value of T s improves the stoichiometry of CdSe films. Analysis of the low-temperature photoluminescence (PL) spectra let us determine the nature and energy of point and extended defects in the investigated films. It was shown that the films contain Na(Li) and P residual impurities. The results of the structural and PL measurements showed that the CdSe polycrystalline films are of fairly good crystal and optical quality for T s ¼ 873 K and can be suitable for various applications.

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Optical and structural properties of polycrystalline CdSe deposited on titanium substrates

Cited by 50 publications

References 19 publications

Electrodeposition of Semiconductors

Electrodeposition of Semiconductors

Electrolytically deposited Cadmium Selenide Films for Photovoltaic Applications

Study of the correlation between structural and photoluminescence properties of CdSe thin films deposited by close-spaced vacuum sublimation

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