Optical and structural studies of the effect of spacers in modulation-doped ZnSe/Zn1−xCdxSe quantum wells

Abstract

The effect of spacers in modulation-doped Zn1−xCdxSe/ZnSe:Cl multiple quantum wells (MD-MQWs) was investigated by photoluminescence (PL) and time-of-flight secondary-ion-mass spectrometry (TOF-SIMS). A comparison was made between structures with and without spacers as a function of annealing temperature. The diffusion of Cl and Cd was monitored by TOF-SIMS depth profiling and photoluminescence. Although TOF-SIMS does not show any significant diffusion of Cl and Cd in both structures at temperatures up to 385 °C, the PL results indicate the modification of optical properties in the Zn1−xCdxSe/ZnSe:Cl MD-MQWs due to annealing. Up to an annealing temperature of 385 °C, the MD-MQWs with spacers show superior optical quality in the quantum well regions, while quenching of the quantum well band-edge PL and strong enhancement of deep-level emission were observed from the MD-MQWs without spacers. This phenomenon suggests that the radiative deep-level emission may provide more efficient channel for electron–hole recombination with increasing annealing temperature.

Correlation between Optical Localization-State and Electrical Deep-Level State in In0.52Al0.48As/In0.53Ga0.47As Quantum Well Structure

“…This would eventually create interfacial defects, forming both the electrical deep-level states and the optical localization states inside the heterojunction. According to previous literature, those energy states may cause the Fermi-edge singularity (FES) phenomena [16][17][18][19][20][21], leading to the abnormal luminescence [21][22][23] and the anomalous carrier transport behaviors [24]. Furthermore, such an FES is known to significantly affect the device performances (e.g., decreased carrier mobility [25,26], increased kink-effect in resonant tunneling [27], cotunneling during the single-electron transport [28], increased electron-phonon coupling [29], increased electron-electron scattering in the photodiode [30], etc.).…”