Optical and structural studies of InN/GaN dots with varying GaN cap thickness

Ke, Wen−Cheng; Kao, Chia-Yu; Houng, Wei-Chung; Wei, Chih-An

doi:10.1016/j.jcrysgro.2011.10.017

Journal of Crystal Growth

2013

DOI: 10.1016/j.jcrysgro.2011.10.017

|View full text |Cite

Optical and structural studies of InN/GaN dots with varying GaN cap thickness

Wen−Cheng Ke

Chia-Yu Kao

Wei-Chung Houng

et al.

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...

Citation Types

Supporting

Mentioning

Contrasting

Year Published

2018

Publication Types

Select...

Article1

Relationship

Self Cite0

Independent1

Authors

Journals

Cited by 1 publication

References 14 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

Self-assembled InN quantum dots on side facets of GaN nanowires

Stankevič

et al. 2018

Journal of Applied Physics

View full text Add to dashboard Cite

Self-assembled, atomic diffusion controlled growth of InN quantum dots was realized on the side facets of dislocation-free and c-oriented GaN nanowires having a hexagonal cross-section. The nanowires were synthesized by selective area metal organic vapor phase epitaxy. A 3 Å thick InN wetting layer was observed after growth, on top of which the InN quantum dots formed, indicating self-assembly in the Stranski-Krastanow growth mode. We found that the InN quantum dots can be tuned to nucleate either preferentially at the edges between GaN nanowire side facets, or directly on the side facets by tuning the adatom migration by controlling the precursor supersaturation and growth temperature. Structural characterization by transmission electron microscopy and reciprocal space mapping show that the InN quantum dots are close to be fully relaxed (residual strain below 1%) and that the c-planes of the InN quantum dots are tilted with respect to the GaN core. The strain relaxes mainly by the formation of misfit dislocations, observed with a periodicity of 3.2 nm at the InN and GaN hetero-interface. The misfit dislocations introduce I1 type stacking faults (…ABABCBC…) in the InN quantum dots. Photoluminescence investigations of the InN quantum dots show that the emissions shift to higher energy with reduced quantum dot size, which we attribute to increased quantum confinement.

show abstract

Self-assembled InN quantum dots on side facets of GaN nanowires

Stankevič

et al. 2018

Journal of Applied Physics

View full text Add to dashboard Cite

show abstract

scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.

Contact Info

customersupport@researchsolutions.com

10624 S. Eastern Ave., Ste. A-614

Henderson, NV 89052, USA

This site is protected by reCAPTCHA and the Google Privacy Policy and Terms of Service apply.

Blog Terms and Conditions API Terms Privacy Policy Contact Cookie Preferences Do Not Sell or Share My Personal Information

Made with 💙 for researchers

Part of the Research Solutions Family.

Optical and structural studies of InN/GaN dots with varying GaN cap thickness

Cited by 1 publication

References 14 publications

Self-assembled InN quantum dots on side facets of GaN nanowires

Self-assembled InN quantum dots on side facets of GaN nanowires

Contact Info

Product

Resources

About