Optical and thermoluminescence properties of Lu2Si2O7:Pr single crystal

Rare-earth ions incorporation into Lu2Si2O7 scintillator crystals: Electron paramagnetic resonance and luminescence study

“…7). Only the transitions characteristic for the Pr 3+ were observed in according with already published data [37]. RL spectrum of the same crystal is shown in Fig.…”

Photoluminescence and scintillation properties of Pr-doped (Lu, Y)2Si2O7 crystals

“…The XRD patterns of Lu 0.75 Y 0.25 and Lu 0.50 Y 0.50 crystals were matched with the reference of LPS; hence these samples had a monoclinic crystal system with a space group of C2/m. 36) In the pattern of Lu 0.25 Y 0.75 , some other peaks were observed at 18.0, 20.8, and 28.8 degrees (dotted in the figure) in addition to the pattern of LPS. They would originate from the γ-YPS because the same peaks were confirmed in the past study of YPS.…”

Optical Floating Zone Crystal Growth of Rare-Earth Disilicates, R2Si2O7 (R = Er, Ho, and Tm)

“…R 2 Si 2 O 7 compounds are widely investigated for their luminescent and optical properties, with potential applications as crystal scintillators and in the detection of γ- and X-rays. − Recently, rare-earth disilicates were identified as promising candidates for thermal barrier coating/environmental barrier coating systems, due to their low thermal conductivities. − …”

“…There have been many attempts to grow crystals of the rare-earth disilicate compounds. Typical routes used to prepare R 2 Si 2 O 7 crystals include the Verneuil, flux, − Czochralski, chemical vapor transport, floating zone, , and micropulling-down techniques. The FZ method of crystal growth has been widely employed in the past for the growth of oxides, and not only is it an ideal technique to produce large, high-quality single crystals, but it is also one of the most appropriate methods due to its advantages compared to the conventional techniques of crystal growth. − The main benefits of employing the standard FZ technique for the growth of crystals are (a) the high purity of the crystals grown thanks to the absence of a container (crucible) and solvent (flux), (b) the relatively large size of the crystal boules obtained compared with other techniques, (c) the good crystalline quality and uniformity of the physical properties throughout the crystals, (d) the fact that this method can be used for growing refractory materials.…”

“…There have been many attempts to grow crystals of the rare-earth disilicate compounds. Typical routes used to prepare R 2 Si 2 O 7 crystals include the Verneuil, 19 flux, 20−25 Czochralski, 8 chemical vapor transport, 26 floating zone, 6,16 and micropulling-down 27 techniques. The FZ method of crystal growth has been widely employed in the past for the growth of oxides, and not only is it an ideal technique to produce large, high-quality single crystals, but it is also one of the most appropriate methods due to its advantages compared to the conventional techniques of crystal growth.…”