2016
DOI: 10.1088/0953-8984/28/47/475303
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Optical and transport properties correlation driven by amorphous/crystalline disorder in InP nanowires

Abstract: Indium phosphide nanowires with a single crystalline zinc-blend core and polycrystalline/amorphous shell were grown from a reliable route without the use of hazardous precursors. The nanowires are composed by a crystalline core covered by a polycrystalline shell, presenting typical lengths larger than 10 μm and diameters of 80-90 nm. Raman spectra taken from as-grown nanowires exhibited asymmetric line shapes with broadening towards higher wave numbers which can be attributed to phonon localization effects. It… Show more

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“…Semiconductor materials have been widely employed in highefficiency photosensitive systems, mainly as thin films, substrates or nanowires [1]. Most of them are composed of alloys produced by elements of the groups III−V , such as indium phosphide (InP), whose inherent presence of a direct bandgap (1.34 eV at 300 K) in the visible-near-infrared (vis-NIR) range guarantees its sensitivity to electronic excitations in the visible range of solar radiation [2]. Allied to the great values of surface-to-volume ratio at the nanometer scale, these remarkable tools are currently being investigated for employment as a new generation of photo-electronic devices [1][2][3][4][5].…”
Section: Introductionmentioning
confidence: 99%
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“…Semiconductor materials have been widely employed in highefficiency photosensitive systems, mainly as thin films, substrates or nanowires [1]. Most of them are composed of alloys produced by elements of the groups III−V , such as indium phosphide (InP), whose inherent presence of a direct bandgap (1.34 eV at 300 K) in the visible-near-infrared (vis-NIR) range guarantees its sensitivity to electronic excitations in the visible range of solar radiation [2]. Allied to the great values of surface-to-volume ratio at the nanometer scale, these remarkable tools are currently being investigated for employment as a new generation of photo-electronic devices [1][2][3][4][5].…”
Section: Introductionmentioning
confidence: 99%
“…In this regard, InP nanowires have been demonstrated to be a class of very promising key materials to be used in photovoltaic systems due to their high photosensitivity [2,5]. Studies on devices built from semiconductor nanowires and ferromagnetic contacts have demonstrated that both spin and charge can be explored in order to get spintronic functionalities [6].…”
Section: Introductionmentioning
confidence: 99%