Optical and transport properties of high quality crystals of V2O4 near the metallic transition temperature

Ladd, L. A.; Paul, William

doi:10.1016/0038-1098(69)90888-6

Cited by 212 publications

(121 citation statements)

References 3 publications

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“…Vanadium dioxide shows a metal-insulator transition (MIT) with several orders of magnitude conductivity change, accompanied by a phase change from high temperature tetragonal rutile structure (P4 2 /mnm) to low temperature monoclinic structure (P2 1 /c) [1]. The phase change is accomplished by a small lattice distortion along the c axis of the tetragonal structure hence the formation of V-V pairs along a axis in the monoclinic structure.…”

Section: Introductionmentioning

confidence: 99%

Synthesis of vanadium dioxide thin films on conducting oxides and metal–insulator transition characteristics

Cui

Wang

Zhou

et al. 2012

Journal of Crystal Growth

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We report on growth and physical properties of vanadium dioxide (VO 2 ) films on model conducting oxide underlayers (Nb-doped SrTiO 3 and RuO 2 buffered TiO 2 single crystals). The VO 2 films, synthesized by rf sputtering, are highly textured as seen from X-ray diffraction. The VO 2 film grown on Nb doped SrTiO 3 shows over two orders of magnitude metal-insulator transition, while VO 2 film on RuO 2 buffered TiO 2 shows a smaller resistance change but with an interesting two step transition. X-ray photoelectron spectroscopy has been performed as a function of depth on both sets of structures to provide mechanistic understanding of the transition characteristics. We then investigate voltage-driven transition in the VO 2 films grown on Nbdoped SrTiO 3 substrate as a function of temperature. The present study contributes to efforts towards correlated oxide electronics utilizing phase transitions.

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Section: Introductionmentioning

confidence: 99%

Synthesis of vanadium dioxide thin films on conducting oxides and metal–insulator transition characteristics

Cui

Wang

Zhou

et al. 2012

Journal of Crystal Growth

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“…We touch down on the surface with feedback to fix cantilever deflection at a typical setpoint of ∼ 4 nm, corresponding to a force of 160 nN, and a pressure of ∼ 800 bar (assuming a tip contact area diameter ∼ 50 nm). The transition temperature has been shown to shift most significantly with c-axis uniaxial stress, at a rate of −1.2 K/kbar 18 . The force applied by the tip therefore corresponds to change in local transition temperature ∆T c of at most 1 K 19 .…”

mentioning

confidence: 99%

Nanoscale imaging and control of resistance switching in VO2 at room temperature

Kim

Frenzel

et al. 2010

Applied Physics Letters

128

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“…[27][28][29][30][31][32][33][34][35][36][37][38][39] An interesting MIT system as candidate to generate conducting ion tracks or generally to produce ion-induced conductivity changes is VO 2 . VO 2 exhibits a reversible temperature driven MIT, which markedly changes its electronic and optical properties.…”

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confidence: 99%

Tuning the conductivity of vanadium dioxide films on silicon by swift heavy ion irradiation

et al. 2011

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We demonstrate the generation of a persistent conductivity increase in vanadium dioxide thin films grown on single crystal silicon by irradiation with 1 GeV 238U swift heavy ions at room temperature. VO2 undergoes a temperature driven metal-insulator-transition (MIT) at 67 °C. After room temperature ion irradiation with high electronic energy loss of 50 keV/nm the conductivity of the films below the transition temperature is strongly increased proportional to the ion fluence of 5·109 U/cm2 and 1·1010 U/cm2. At high temperatures the conductivity decreases slightly. The ion irradiation slightly reduces the MIT temperature. This observed conductivity change is persistent and remains after heating the samples above the transition temperature and subsequent cooling. Low temperature measurements down to 15 K show no further MIT below room temperature. Although the conductivity increase after irradiation at such low fluences is due to single ion track effects, atomic force microscopy (AFM) measurements do not show surface hillocks, which are characteristic for ion tracks in other materials. Conductive AFM gives no evidence for conducting ion tracks but rather suggests the existence of conducting regions around poorly conducting ion tracks, possible due to stress generation. Another explanation of the persistent conductivity change could be the ion-induced modification of a high resistivity interface layer formed during film growth between the vanadium dioxide film and the n-Silicon substrate. The swift heavy ions may generate conducting filaments through this layer, thus increasing the effective contact area. Swift heavy ion irradiation can thus be used to tune the conductivity of VO2 films on silicon substrates

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Optical and transport properties of high quality crystals of V2O4 near the metallic transition temperature

Cited by 212 publications

References 3 publications

Synthesis of vanadium dioxide thin films on conducting oxides and metal–insulator transition characteristics

Synthesis of vanadium dioxide thin films on conducting oxides and metal–insulator transition characteristics

Nanoscale imaging and control of resistance switching in VO2 at room temperature

Tuning the conductivity of vanadium dioxide films on silicon by swift heavy ion irradiation

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