Optical beam shift induced by direct current

Abstract

Optical beam shift is related to external conditions. Here, optical spot position and the polarization properties of the totally polarized, P-polarized, and S-polarized laser beams reflected from an aluminum film as a function of the external direct current (DC) voltage are measured by a Slit Beam Profiler and a polarimeter. The results show that the optical beam shift of the totally polarized laser beam and the Spolarized laser beam jumps from 500 to 590 mm, and À10 to 70 mm, respectively, at different critical pressures, when the external DC value changes from 0 to 2.5 V, while the optical beam shift of the P-polarized laser beam is small and has no jump. The degree of linear polarization of different polarized laser beams cannot change, while the degree of circular polarization of different polarized laser beams changes as a function of the external DC voltage value.

Imbert–Fedorov Effects of Polarized Laser Beams Reflected from Dove Prism/Indium Tin Oxide Interface under Electric and Thermal Fields

“…Goos-Hänchen (GH) and Imbert-Fedorov (IF) effects are effective beam shifts that deviate from the theoretical optical geometry in the parallel and vertical directions of the incident light; they are realized when light is incident upon a surface or interface. GH and IF effects have been researched for more than 60 years; [1,2] they have been observed in various structures and material systems, including glass-indium tin oxide (ITO)surrounding media, [3] prism/air/CeYIG/SiO 2 media, [4] electrooptic/magneto-electric heterostructures, [5,6] metasurfaces, [7][8][9][10][11] metals, [12] metal-insulator-semiconductor, [13] graphene-coated surfaces, [14] garnet, [15] SiO 2 /Si, [16] and dielectric slabs. [17] Researchers have considered not only the physical principles but also the applications of GH and IF effects, including sensing [18] and switching.…”

Goos–Hänchen Shift in Single Crystal Silicon Induced by the Electro‐Optic Effects

“…Many applications based on Goos–Hänchen shifts have been proposed for optical sensors and optical switching . The Goos–Hänchen shift can also be found in electro‐optic structures and can be induced by strain . Recently, E. Timurdogan studied the nonlinear optical effect in silicon waveguides induced by an electric field .…”