Optical Behaviour of Lead Selenide Films

Abstract

Lead selenide thin films of thicknesses between 80 to 250 nm, are prepared by thermal evaporation under vacuum of -1.3 x Pa. X-ray diffraction studies reveal the formation of polycrystalline films. The optical gap is determined as a function of film thickness. It is observed that the width of the optical gap lies between 0.3 to 0.4 eV, additionally it shows the tendency t o decrease with increasing film thickness. Ellipsometry is used to estimate the optical constants and the absorption coefficient. Two well defined peaks are observed at energies of about 1.8 and 2.9 eV. The data are analysed in the frame of the band structure of PbSe,.

Investigation on structural, optical, morphological and electrical properties of thermally deposited lead selenide (PbSe) nanocrystalline thin films

“…Optical (transmittance and absorption) spectra recorded in the visible and near infrared regions are related to electronic transitions and also useful in understanding the electronic band structure of the semiconducting films [32]. The optical transmittance and absorbance spectra of PbSe thin films deposited at different substrate temperatures were recorded in the wavelength range of 400-1100 nm and are shown in Fig.…”

A facile approach called nebulized spray pyrolysis to deposit MnS thin films: Effect of solution concentration with EDTA on the physical properties

“…This feature in the optical absorption spectrum is known as the optical absorption edge [21]. It may be mentioned that the optical absorption spectra recorded in the visible and near infrared (NIR) regions are related to the electronic transitions, which are useful in understanding the electronic band structure of the deposited films [22]. The absorption takes place more in UV-vis region and less in NIR region which would prop up the optoelectronic applications of MnS films.…”

Study of Electrical Properties of p-PbSe/p-Si Heterojunction

“…lattice of NaCl type. It is characterized by high dielectric susceptibility, high carrier mobility [4], and a narrow band gap (T=293K, PbSe)~0.27eV [5,6]. Optical properties in the visible and infrared regions of spectra are related to the electron transitions.…”