2019
DOI: 10.1002/pssb.201800631
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Optical Cavity Based on GaN Planar Nanowires Grown by Selective Area Metal‐Organic Vapor Phase Epitaxy

Abstract: GaN planar nanowires (NWs) are fabricated by selective area metal-organic vapor phase epitaxy using focused ion beam etching of trench pattern in the Si 3 N 4 mask. Two crystallographic orientations of NWs along 11 20 ½ and 10 10 ½ directions are investigated. The coherent growth is confirmed for both directions; however, the best morphology, crystalline and optical properties are found in the GaN planar NWs fabricated along the 10 10 ½ axis. Cathodoluminescence (CL) at 5 K reveals a presence of Fabry-Perot mo… Show more

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Cited by 10 publications
(7 citation statements)
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“…The difference in quality between planar NWs oriented in different directions can be attributed to the dependence of the lateral and vertical growth rates on orientation. The shape of NWs is determined by slow-growing semi-polar {11 01} facets [23]. In addition, the emission, as revealed by the anchromatic CL map (figure 1(b)), is non-uniform across the facets, where the darker intensity contrast corresponds to areas with the presence of stacking faults.…”
Section: Resultsmentioning
confidence: 99%
“…The difference in quality between planar NWs oriented in different directions can be attributed to the dependence of the lateral and vertical growth rates on orientation. The shape of NWs is determined by slow-growing semi-polar {11 01} facets [23]. In addition, the emission, as revealed by the anchromatic CL map (figure 1(b)), is non-uniform across the facets, where the darker intensity contrast corresponds to areas with the presence of stacking faults.…”
Section: Resultsmentioning
confidence: 99%
“…Травление решетки РБО вблизи заднего зеркала лазера (рис. 1) проведено в сверхвысоком вакууме фокусированным пучком ионов галлия c энергией 30 keV (рабочий ток 450 pA), сфокусированным в пятно диаметром 40 nm; величина шероховатости травленой поверхности не превышала 2 nm [19]. Доза облучения области РБО при травлении составляла 1.75 pC/cm 2 .…”
Section: поступило в редакцию 29 ноября 2019 г в окончательной редакunclassified
“…Одним из примеров такого подхода является селективная газофазная эпитаксия. В работе [7] показана возможность формирования методом селективной газофазной эпитаксии из металлоорганических соединений (ГФЭМОС) различных субмикрометровых объектов из GaN. В частности, данным методом могут выращиваться нановискеры [8].…”
Section: Introductionunclassified