Optical characterisation of MOVPE grown vertically correlated InAs/GaAs quantum dots

Hazdra, P.; Voves, J.; Oswald, J.; Kuldová, K.; Hospodková, A.; Hulicius, E.; Pangrác, J.

doi:10.1016/j.mejo.2007.06.005

Cited by 23 publications

(14 citation statements)

References 7 publications

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“…In contrast to this, our result shows that the increase in the dots density was the result of QDs stacking [3,4]. In another result, the dots density does not change with number of dots layer and the dots were vertically correlated [12]. Didik Aryanto, Zulkafli Othaman, Abd.…”

Section: Figure 1 Schematic Of N-stacked Structures Qdscontrasting

confidence: 63%

GROWTH AND PROPERTIES OF STACKED SELF-ASSEMBLED In0.5Ga0.5As QUANTUM DOTS

Aryanto

Othaman

Ismail

2012

J. Penelit. Fis. Apl.

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Self-assembled In 0.5 Ga 0.5 As quantum dots (QDs) were grown using metal-organic chemical vapor deposition (MOCVD) on GaAs (100) substrate with different number of stacking QDs layers. Surface study using atomic force microscopy (AFM) shows that surface morphology of the self-assembled QDs change with different number of stacking QDs layers caused by the previous QDs layers and the thickness of the GaAs spacer layers. PL measurement shows variation in the PL spectra as a function of number of stacking layers of In 0.5 Ga 0.5 As QDs. The PL peak positions blue-shifted from 1225 nm to 1095 nm and dramatically increase in intensity with increasing number of stacking QDs layers.

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Section: Figure 1 Schematic Of N-stacked Structures Qdscontrasting

confidence: 63%

GROWTH AND PROPERTIES OF STACKED SELF-ASSEMBLED In0.5Ga0.5As QUANTUM DOTS

Aryanto

Othaman

Ismail

2012

J. Penelit. Fis. Apl.

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“…1, 14,19,[28][29][30] However, it can be quite difficult to get clear QD PR signatures, due to the small QD volume and consequential small signal amplitudes. There are several PR studies of either InAs/GaAs QDs 14,19,[28][29][30] or InAs/InP QDs. 1 However, we are not aware of any previous PR investigations of InAs/InGaAs/InP QDs emitting at ϳ2 m. Here, we were able to record clean PR spectra over a wide range of temperatures, as shown by the examples in Fig.…”

Section: Resultsmentioning

confidence: 99%

An accurate determination of the electronic transitions of InAs/InGaAs/InP quantum dots for midinfrared lasers using simultaneous complementary spectroscopic techniques

Sharma

Hosea

Sweeney

2008

Journal of Applied Physics

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InAs/InGaAs/InP quantum dots ͑QDs͒ emitting at ϳ2 m for midinfrared laser applications are studied using the complementary spectroscopic techniques of photoluminescence ͑PL͒, photoreflectance ͑PR͒, and surface photovoltage spectroscopy ͑SPS͒. We use a procedure that ensures that the same sample spot is studied virtually simultaneously by these three different spectroscopic techniques under almost identical conditions. We are able to measure the ground and excited states transitions of the InAs QDs without any ambiguity, thus providing a complete and clear understanding of the electronic transitions. Temperature dependent PL, SPS, and PR measurements provide a systematic thermal evolution of the ground and excited states. However, the QD transitions are not all seen together at any given temperature in either the PL or SPS measurements. By contrast, the PR technique can measure the complete set of ground and two excited state QD transitions and also the InGaAs barrier energy at all studied temperatures.

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“…Most epitaxial semiconductor nanostructures studied to date, such as self-assembled quantum dots and nanowires, are typically restricted to materials that are nominally lattice-matched to the substrate, 1,2 or to those grown with insufficient thickness for strain relaxation by misfit-dislocation formation. 3 Even small deviations from these lattice-matched combinations present limitations for structural design. But the use of partially relaxed compositional grades in metamorphic systems eliminates the need to modify the targeted nanostructure for the purpose of strain management, while providing an additional handle that could be used to introduce strain, which may alter physical properties 4 or influence the self-assembly mechanism.…”

Section: Introductionmentioning

confidence: 99%

Epitaxial nanowire formation in metamorphic GaAs/GaPAs short-period superlattices

Zheng

Ahrenkiel

2017

AIP Advances

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Metamorphic growth presents routes to novel nanomaterials with unique properties that may be suitable for a range of applications. We discuss self-assembled, epitaxial nanowires formed during metalorganic chemical vapor deposition of metamorphic GaAs/GaPAs short-period superlattices. The heterostructures incorporate strain-engineered GaPAs compositional grades on 6°-<111>B miscut GaAs substrates. Lateral diffusion within the SPS into vertically aligned, three-dimensional columns results in nanowires extending along <110>A directions with a lateral period of 70-90 nm. The microstructure is probed by transmission electron microscopy to confirm the presence of coherent GaAs nanowires within GaPAs barriers. The compositional profile is inferred from analysis of {200} dark-field image contrast and <210> lattice images.

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Optical characterisation of MOVPE grown vertically correlated InAs/GaAs quantum dots

Cited by 23 publications

References 7 publications

GROWTH AND PROPERTIES OF STACKED SELF-ASSEMBLED In0.5Ga0.5As QUANTUM DOTS

GROWTH AND PROPERTIES OF STACKED SELF-ASSEMBLED In0.5Ga0.5As QUANTUM DOTS

An accurate determination of the electronic transitions of InAs/InGaAs/InP quantum dots for midinfrared lasers using simultaneous complementary spectroscopic techniques

Epitaxial nanowire formation in metamorphic GaAs/GaPAs short-period superlattices

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