Optical characterisation of porous silicon layers by spectrometric ellipsometry in the 1.5–5 eV range

Ferrieu, F.; Halimaoui, A.; Bensahel, D.

doi:10.1016/0038-1098(92)90124-r

Cited by 66 publications

(13 citation statements)

References 11 publications

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“…A special concern is the origin of the characteristic peak which appears in the absorption spectrum. [25][26][27][28] A similar peak is found also in the PL excitation 15,[29][30][31][32][33][34][35][36][37][38][39][40] ͑PLE͒ and the photoconduction 17,33,35,41 spectra of the material. Such a peak is also predicted in the imaginary part of the dielectric constant by a theoretical study on Si quantum dots.…”

supporting

confidence: 59%

Large and irregular shift of photoluminescence excitation spectra observed in photochemically etched porous silicon

1996

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Photoluminescence excitation ͑PLE͒ spectra of porous silicon have been studied for samples subjected to postanodization photochemical etching in a HF solution. It is shown that the peak energies of the PLE spectra show a large shift of about 1 eV with increasing etching time. Furthermore, the manner in which the PLE spectra shift is irregular; they first move toward lower energies, and then back to higher energies with increasing etching time. This behavior is interpreted by assuming two independent excitation mechanisms competing with each other in luminescent Si nanocrystallites: a direct-gap absorption process similar to the ϳ4-eV absorption in bulk crystalline Si and the direct excitation of localized states in the crystallites. The latter excitation mechanism is more important in efficiently luminescent samples.

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supporting

confidence: 59%

Large and irregular shift of photoluminescence excitation spectra observed in photochemically etched porous silicon

1996

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“…19,20 The observation of strongly anisotropic scattering of laser light at oblique incidence on a ͑100͒-oriented PS layer was reported recently and positive birefringence was observed. 21 We have carried out also incident angle-dependent transmission measurements of our structures.…”

Section: Single Microcavitymentioning

confidence: 73%

Free-standing porous silicon single and multiple optical cavities

Ghulinyan

Otón

Bonetti

et al. 2003

Journal of Applied Physics

137

115

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The porous silicon free-standing microcavity structures, with different layer designs, were fabricated. The single microcavities were found to show transmission resonances in the wavelength region of 1.55μm with quality factors of upto 3380. The incident angle dependent measurements were also reported where transmission peak blueshift and splitting of transverse electric and transverse magnetic polarized modes due to porous silicon birefringence were observed

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“…The variation of ⑀ 2 with porosity is well established experimentally. 28 A second point concerns the values of ⑀ 2 . A dramatic reduction of ⑀ 2 is measured on going from c-Si to p-Si: the intensity of main bulklike peak change from ϳ45 to ϳ3.…”

Section: The Luminescent Transitionmentioning

confidence: 99%

Electron states and luminescence transition in porous silicon

et al. 1996

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The theoretical analysis of two different Si wires of size 5×4 and 3×4, simulating porous Si, has been performed through the linear-muffin-tin-orbitals method in the atomic sphere approximation. All the atomic core energies were self-consistently computed and used to directly compare the energies of the quantum wires and that of the crystalline Si, by aligning the 2p core level of a Si atom located at the center of the wire to that corresponding to crystalline Si. The optical properties of the wires have been computed by evaluating the imaginary part of the dielectric function. The main results are (i) the opening of the gap is asymmetric; 1/3 of the widening is in the valence band, while 2/3 in the conduction band; (ii) the near band-gap states originate mainly from Si atoms located at the center of the wire; (iii) the imaginary part of the dielectric function shows a low-energy structure, strongly anisotropic, that follows the blueshift for the gap and is identified as responsible of the luminescence transition; (iv) the spatial localization of the valence- and conduction-band states participating in the luminescence transition shows that all the Si atoms of the wire are collectively involved

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Optical characterisation of porous silicon layers by spectrometric ellipsometry in the 1.5–5 eV range

Cited by 66 publications

References 11 publications

Large and irregular shift of photoluminescence excitation spectra observed in photochemically etched porous silicon

Large and irregular shift of photoluminescence excitation spectra observed in photochemically etched porous silicon

Free-standing porous silicon single and multiple optical cavities

Electron states and luminescence transition in porous silicon

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