Optical characteristics of a-plane InGaN∕GaN multiple quantum wells with different well widths

Ko, Tsung-Shine; Lu, Tien−Chang; Wang, T. C.; Lo, M. H.; Chen, J. R.; Gao, R. C.; Kuo, Hao‐Chung; Wang, S. C.; Shen, Ji‐Lin

doi:10.1063/1.2735935

Cited by 17 publications

(16 citation statements)

References 30 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…In this work, we therefore study of the effect of quantum confinement on the optical properties of a-plane InGaN/GaN single QWs (SQWs) in this 'narrow' QW limit (L w < a B ). Whilst other optical studies of heteroepitaxially [7,8], these do not take into account the presence of BSFs or V-defects in the material: both of which affect the optical properties of the QWs [9].…”

mentioning

confidence: 98%

Exciton confinement in narrow non‐polar InGaN/GaN quantum wells grown on r‐plane sapphire

Badcock

Kappers

Moram

et al. 2012

Physica Status Solidi (b)

View full text Add to dashboard Cite

We have investigated the optical properties of a series of nonpolar InGaN/GaN single quantum wells (QWs) grown on r-plane sapphire with QW widths ranging from 7 to 45 Å . The emission is attributed to recombination in regions of the QW intersected by basal plane stacking faults. For QW widths < 30 Å , the linewidth of both the photoluminescence (PL) spectrum and the QW exciton measured in PL excitation reduces with decreasing QW width, effects which are attributed to the increasing penetration of the exciton wavefunction into the GaN barriers. Furthermore, the associated increase in confinement energy is proposed to induce a delocalisation of the exciton within the plane of the QW/basal plane stacking fault (BSF), which results in an increased temperature sensitivity of the integrated emission intensity for QWs narrower than 22 Å .

show abstract

mentioning

confidence: 98%

Exciton confinement in narrow non‐polar InGaN/GaN quantum wells grown on r‐plane sapphire

Badcock

Kappers

Moram

et al. 2012

Physica Status Solidi (b)

View full text Add to dashboard Cite

show abstract

“…3,4 Although these effects may be minimized in LED structures if the QWs are fabricated in non-polar orientations, there have been few such investigations, including studies of (11-20) "aplane" InGaN/GaN QWs on (10-12) r-plane sapphire and aplane SiC as well as studies of (10-10) "m-plane" InGaN/GaN QWs on (100) LiAlO 2 substrates. [7][8][9] In a prototypical study, the reduced quantum-confined Stark effect in a-plane GaN/AlGaN QW structures reduced the redshift with increasing QW width as compared to structures grown in the c-direction. 10 However, these QWs, grown on a film of a-plane GaN on r-plane sapphire, possessed a high defect density of both dislocations and stacking faults.…”

mentioning

confidence: 99%

Spectroscopic investigation of coupling among asymmetric InGaN/GaN multiple quantum wells grown on non-polar a-plane GaN substrates

Roberts¹,

Mohanta²,

Everitt³

et al. 2013

Appl. Phys. Lett.

View full text Add to dashboard Cite

“…5(b) is the fitting results of integrated PL intensity and the power index α for all samples are around 1. From the negligible PL peak energy shift and nearly identical α index, it suggests that no built-in electric field exists within these a-plane MQW samples [19].…”

Section: Resultsmentioning

confidence: 99%

Optical Properties of A-Plane InGaN/GaN Multiple Quantum Wells Grown on Nanorod Lateral Overgrowth Templates

Huang

Ling

Chan

et al. 2011

IEEE J. Quantum Electron.

View full text Add to dashboard Cite

Abstract-A-plane InGaN/GaN multiple-quantum wells (MQWs) were grown on a series of nanorod epitaxial lateral overgrowth (NRELOG) templates with varied nanorod depth. Optical properties of these samples were investigated by excitation power and temperature-dependent photoluminescence (PL). Due to the absence of quantum-confined Stark effect, the negligible PL emission peak shift and nearly identical power index for all samples were observed. In contrast to the as-grown MQWs, the thermal activation energy and internal quantum efficiency of NRELOG MQWs exhibit 1.6-fold and 4-fold increases, respectively, which are attributed to the improvement of crystal quality by NRELOG. Furthermore, the Shockley-Read-Hall nonradiative coefficient, determined from the fits of power-dependent PL quantum efficiency, is also apparently reduced while MQWs are grown on NRELOG GaN template. The results show the feasibility to fabricate high radiative efficiency a-plane devices via NRELOG.Index Terms-A-plane, InGaN/GaN multiple quantum wells, internal quantum efficiency, nanorod lateral epitaxial overgrowth.

show abstract

Optical characteristics of a-plane InGaN∕GaN multiple quantum wells with different well widths

Abstract: KAUST Repository Item type Article Authors Ajia, Idris A.; Edwards, P. R.; Liu, Z.; Yan, J. C.; Martin, R. W.; Roqan, Iman S. Citation Excitonic localization in AlN-rich AlxGa1xN/AlyGa1yN multi-quantum-well grain boundaries 2014, 105 (12):122111 Applied Physics Letters

Cited by 17 publications

References 30 publications

Exciton confinement in narrow non‐polar InGaN/GaN quantum wells grown on r‐plane sapphire

Exciton confinement in narrow non‐polar InGaN/GaN quantum wells grown on r‐plane sapphire

Spectroscopic investigation of coupling among asymmetric InGaN/GaN multiple quantum wells grown on non-polar a-plane GaN substrates

Optical Properties of A-Plane InGaN/GaN Multiple Quantum Wells Grown on Nanorod Lateral Overgrowth Templates

Contact Info

Product

Resources

About