Optical characteristics of m-plane InGaN/GaN multiple quantum well grown on LiAlO2 (100) by MOVPE

Hang, Da-Ren; Chou, Mitch M. C.; Chang, Liuwen; Lin, Jyi-Tsong; Heuken, M.

doi:10.1016/j.jcrysgro.2009.01.042

Cited by 8 publications

(7 citation statements)

References 20 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Published data concerning the homogeneity and the internal quantum efficiency of nonpolar heteroepitaxially grown quantum wells are ambiguous. More homogeneous [16] or less homogeneous [17] quantum well compositions compared to polar c-plane quantum wells as well as similar [16,18,19] or lower quantum efficiency [20,21] are reported.…”

Section: Introductionmentioning

confidence: 86%

Strong charge carrier localization interacting with extensive nonradiative recombination in heteroepitaxially grown m-plane GaInN quantum wells

Netzel¹,

Mauder²,

Wernicke³

et al. 2011

Semicond. Sci. Technol.

View full text Add to dashboard Cite

The development of GaInN quantum well structures with nonpolar crystal orientation for light-emitting diodes and semiconductor lasers is currently one of the main foci of III-nitride-based optoelectronics research. One of the advantages of nonpolar orientations is the absence of polarization fields perpendicular to the quantum well plane. As a consequence, radiative recombination rates are higher compared to quantum wells on polar surfaces. However, due to high densities of threading dislocations and basal plane stacking faults in the case of heteroepitaxially grown nonpolar layers, and due to band gap inhomogeneities in the GaInN quantum wells, characterization of radiative and nonradiative recombination mechanisms is a complex challenge. So far, most published data about band gap fluctuations, charge carrier localization and internal quantum efficiency in nonpolar quantum wells are ambiguous. Here, we present temperature and excitation power density-dependent photoluminescence data featuring multiple characteristics related to strong charge carrier localization in m-plane (1-100) GaInN quantum wells. Thermally activated redistribution of charge carriers between localization sites in these quantum wells is weaker than in polar c-plane ones. The localization strength increases with higher indium concentration in the quantum wells. In the heteroepitaxially grown quantum well structures, the internal quantum efficiency is reduced even at low temperatures (T = 10 K) and especially for m-plane quantum wells with high indium mole fractions.

show abstract

Section: Introductionmentioning

confidence: 86%

Strong charge carrier localization interacting with extensive nonradiative recombination in heteroepitaxially grown m-plane GaInN quantum wells

Netzel¹,

Mauder²,

Wernicke³

et al. 2011

Semicond. Sci. Technol.

View full text Add to dashboard Cite

show abstract

“…6(a), the polarization ratio is modulated a little bit with a level around 0.61 in the emission band. The weak modulation of polarization ratio has been attributed to the thickness interference effect [17,23,24]. Another important point here is whether the two-orientation sample B possesses the same optical polarization anisotropy.…”

Section: Resultsmentioning

confidence: 97%

“…In our definition of the in-plane polarization angle j in the m-plane, the angle j=901 is defined to be perpendicular to the c-axis. Other technical details can be found in our previous reports on optical spectroscopy [16,17]. From the X-ray measurements, the lattice parameters are a= 0.3198 nm and a= 0.3199 nm for samples A and B, respectively.…”

Section: Methodsmentioning

confidence: 99%

MOVPE growth and properties of non-polar InGaN/GaN multiple quantum wells on γ-LiAlO2 substrates

Hang

Chou

Mauder

et al. 2010

Journal of Crystal Growth

Self Cite

View full text Add to dashboard Cite

“…Due to the large mismatch in thermal expansion coefficient and lattice constants, dislocation occurs easily in this growth mode [ 218 ]. As bringing down dislocation density is important for the device performance, many strategies were proposed, such as the epitaxial lateral overgrowth (ELO) process and adoption of alternative substrates [ 219 , 220 , 221 ]. This kind of obstacle can be overcome by the use of one-dimensional semiconductor nanorods or nanorod-films [ 222 ].…”

Section: Applicationsmentioning

confidence: 99%

A Review on Low-Dimensional Nanomaterials: Nanofabrication, Characterization and Applications

et al. 2022

View full text Add to dashboard Cite

The development of modern cutting-edge technology relies heavily on the huge success and advancement of nanotechnology, in which nanomaterials and nanostructures provide the indispensable material cornerstone. Owing to their nanoscale dimensions with possible quantum limit, nanomaterials and nanostructures possess a high surface-to-volume ratio, rich surface/interface effects, and distinct physical and chemical properties compared with their bulk counterparts, leading to the remarkably expanded horizons of their applications. Depending on their degree of spatial quantization, low-dimensional nanomaterials are generally categorized into nanoparticles (0D); nanorods, nanowires, and nanobelts (1D); and atomically thin layered materials (2D). This review article provides a comprehensive guide to low-dimensional nanomaterials and nanostructures. It begins with the classification of nanomaterials, followed by an inclusive account of nanofabrication and characterization. Both top-down and bottom-up fabrication approaches are discussed in detail. Next, various significant applications of low-dimensional nanomaterials are discussed, such as photonics, sensors, catalysis, energy storage, diverse coatings, and various bioapplications. This article would serve as a quick and facile guide for scientists and engineers working in the field of nanotechnology and nanomaterials.

show abstract

Optical characteristics of m-plane InGaN/GaN multiple quantum well grown on LiAlO2 (100) by MOVPE

Cited by 8 publications

References 20 publications

Strong charge carrier localization interacting with extensive nonradiative recombination in heteroepitaxially grown m-plane GaInN quantum wells

Strong charge carrier localization interacting with extensive nonradiative recombination in heteroepitaxially grown m-plane GaInN quantum wells

MOVPE growth and properties of non-polar InGaN/GaN multiple quantum wells on γ-LiAlO2 substrates

A Review on Low-Dimensional Nanomaterials: Nanofabrication, Characterization and Applications

Contact Info

Product

Resources

About