Optical characteristics of single InAs∕InGaAsP∕InP(100) quantum dots emitting at 1.55μm

Abstract

We have studied the emission properties of individual InAs quantum dots (QDs) grown in an InGaAsP matrix on InP(100) by metal-organic vapor-phase epitaxy. Low-temperature microphotoluminescence spectroscopy shows emission from single QDs around 1550 nm with characteristic exciton-biexciton behavior, and a biexciton antibinding energy of more than 2 meV. Temperaturedependent measurements reveal negligible optical-phonon induced broadening of the exciton line up to 50 K, and emission from the exciton state clearly persists above 70 K. Furthermore, we find no measurable polarized fine structure splitting of the exciton state within the experimental precision. These results are encouraging for the development of a controllable photon source for fiber-based quantum information and cryptography systems.

Electronic structure of self-assembledInAs∕InPquantum dots: Comparison with self-assembledInGong1, Duan2, Li3 et al. 2008Phys. Rev. B

“…Despite their importance, there are only few studies on the InAs/InP system, both theoretically 12,13 and experimentally 14,15,16,17,18,19 compared to the well studied InAs/GaAs QDs. Although the InAs/InP dots and the InAs/GaAs dots have the same dot material, they differ in three aspects, (i) InAs/InP has a much smaller * corresponding author: helx@ustc.edu.cn lattice mismatch (3%) than InAs/GaAs (7%).…”

Single InAs quantum dot arrays and directed self-organization on patterned GaAs (311)B substrates

“…Intense sharp lines are reobserved at elevated tempera- ture. The linewidth slowly increases with temperature up to 40 K due to acoustic phonon scattering followed by a much steeper increase for higher temperatures due to optical phonon scattering, 15 shown in the inset. At 4.5 K, though the efficiency is low, sharp lines from individual QDs can clearly be identified from the temperature dependence with a resolution limited linewidth of 80 eV.…”

Excitonic fine structure and binding energies of excitonic complexes in single InAs quantum dashes

“…[27][28][29][30][31][32] Such quasi-0D structures can offer unique properties hardly accessible in other systems but also enlighten the understanding of the intermediate regime between strong and weak confinement. Furthermore, it is interesting to learn which factors influence the direct Coulomb interactions, correlations and exchange, and thus affecting the binding energies or the exciton fine structure.…”