2006
DOI: 10.1016/j.apsusc.2006.06.008
|View full text |Cite
|
Sign up to set email alerts
|

Optical characterization and microstructure of BaTiO3 thin films obtained by RF-magnetron sputtering

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
4
1

Citation Types

6
17
0

Year Published

2010
2010
2024
2024

Publication Types

Select...
10

Relationship

0
10

Authors

Journals

citations
Cited by 95 publications
(23 citation statements)
references
References 10 publications
6
17
0
Order By: Relevance
“…Moreover, the broadening of the resistive transition increases with increase in the Cr addition. This phenomenon can be explained by the presence of impurities and weak links between the superconducting grains and grain misorientations [21], which is supported by the SEM measurements. Based on these results, the T c values of the samples produced in this work were observed to considerably decrease with the increase of the Cr addition.…”
Section: Electrical Resistivity Measurementssupporting
confidence: 63%
“…Moreover, the broadening of the resistive transition increases with increase in the Cr addition. This phenomenon can be explained by the presence of impurities and weak links between the superconducting grains and grain misorientations [21], which is supported by the SEM measurements. Based on these results, the T c values of the samples produced in this work were observed to considerably decrease with the increase of the Cr addition.…”
Section: Electrical Resistivity Measurementssupporting
confidence: 63%
“…Besides, the broadening of the resistive transition increases as the Mn content enhances (Fig. 1), confirming the presence of impurities and weak links between the superconducting grains [37], which is supported by the SEM measurements. As a result, the T c values of the samples produced in this work are observed to considerably decrease with the increase of the Mn addition.…”
Section: Electrical Resistivity Measurementssupporting
confidence: 69%
“…It is apparent from the table that the offset critical temperatures of the films prepared in this work are observed to be in a range of 54.9-79.7 K. The T-3 obtains the maximum T offset Table 3, indicating that the annealing time and temperature affect dramatically on the broadening of the resistive transition of the samples produced in this work. One can see from the table the minimum T c is about 8.4 K for the T-3 film whereas the maximum T c is about 39.9 K for the T-4 film, resulting from the presence of impurities, grain misorientations and weak links between the superconducting grains [55]. These results are supported by the SEM measurements.…”
Section: Electrical Resistivity Measurementssupporting
confidence: 69%