Optical characterization of bulk GaN substrates with c ‐, a ‐, and m ‐plane surfaces

Paskov, Plamen; Ḿonemar, B.; Paskova, T.; Preble, E. A.; Hanser, Α.; Evans, K. R.

doi:10.1002/pssc.200880918

Cited by 8 publications

(6 citation statements)

References 14 publications

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“…3͒ or could not be detected at ϳ60 K, 5 the energy barrier E B should be small for both Si and O and process ͑i͒ is dominating in this low temperature range. The ionization energy E d of Si and O are expected to be similar ͑the difference due to the chemical shift is expected to be small as shown in GaN with E d ϳ 30 meV for Si and E d ϳ 33 meV for O͒ 21 and hence the donor ionization process ͑ii͒ will be similarly efficient for both centers. However, the donor activation process ͑iii͒ will be more efficient for Si with a shallower DX − state ͑ϳ0.14 eV below the CBM͒ than for O with a deeper DX − state.…”

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confidence: 99%

Shallow donor and DX states of Si in AlN

Són

Bickermann

Janzén

2011

Applied Physics Letters

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In unintentionally Si-doped AlN, the electron paramagnetic resonance (EPR) spectrum of the Si shallow donor (g=1.9905) was observed in darkness at room temperature. The temperature dependence of the EPR signal suggests that Si in AlN is a DX center with the DX- state lying at similar to 78 meV below the neutral shallow donor state. With such relatively small thermal activation energy, Si is expected to behave as a shallow dopant in AlN at normal device operating temperatures.Original Publication:Nguyen Son Tien, M Bickermann and Erik Janzén, Shallow donor and DX states of Si in AlN, 2011, APPLIED PHYSICS LETTERS, (98), 9, 092104.http://dx.doi.org/10.1063/1.3559914Copyright: American Institute of Physicshttp://www.aip.org

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confidence: 99%

Shallow donor and DX states of Si in AlN

Són

Bickermann

Janzén

2011

Applied Physics Letters

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“…Although this physical phenomenon depends on a number of complicated factors, we believe that the most suitable powerful optical technique to comprehensively investigate it is photoluminescence (PL) spectroscopy. In addition, owing to almost zero internal strain the freestanding GaN substrates offer highly beneficial factors for obtaining reliable data: the spectral width of various exciton emission lines is strongly reduced in this case [15], which enables us to unambiguously identify various exciton lines and thereby obtain a deeper insight into the complicated exciton-phonon interactions.…”

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Band-edge optical transitions in a nonpolar-plane GaN substrate: exciton–phonon coupling and temperature effects

Wang¹,

Xu²

2016

Semicond. Sci. Technol.

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We present a detailed investigation of the band-edge optical transitions involving the interacting exciton-phonon system, especially first-order longitudinal optical (LO) phonon-assisted luminescence of bound and free excitons in mand c-plane GaN substrates in a low temperature range from 4 K to 40 K. The main luminescence features of all of the three kinds of excitons can be well described by the theoretical models that take exciton-LO-phonon coupling into account. The effective Bohr radii of the excitons play a key role in determining the Huang-Rhys factor characterizing the exciton-LO-phonon coupling strength in GaN. An interesting oscillatory structure is found to appear in the low-temperature luminescence spectra of the nonpolar-plane GaN substrate, which needs to be clarified by further investigations.

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“…22 A 4 K -PL spectrum, shown in Fig. 4, exhibits a sharp near band edge ͑BE͒ emission at 3.47 eV with a narrow FWHM of 6.3 meV.…”

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Electronic-grade GaN(0001)/Al2O3(0001) grown by reactive DC-magnetron sputter epitaxy using a liquid Ga target

Junaid

Hsiao

Pališaitis

et al. 2011

Applied Physics Letters

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Electronic-grade GaN (0001) epilayers have been grown directly on Al2O3 (0001) substrates by reactive DC-magnetron sputter epitaxy (MSE) from a liquid Ga sputtering target in an Ar/N2 atmosphere. The as-grown GaN epitaxial film exhibit low threading dislocation density on the order of ≤ 1010 cm-2 obtained by transmission electron microscopy and modified Williamson-Hall plot. X-ray rocking curve shows narrow fullwidth at half maximum (FWHM) of 1054 arcsec of the 0002 reflection. A sharp 4 K photoluminescence peak at 3.474 eV with a FWHM of 6.3 meV is attributed to intrinsic GaN band edge emission. The high structural and optical qualities indicate that MSEgrown GaN epilayers can be used for fabricating high-performance devices without the need of any buffer layer.On the day of the defence date the status of this article was: Manuscript.Original Publication:Muhammad Junaid, Ching-Lien Hsiao, Justinas Palisaitis, Jens Jensen, Per Persson, Lars Hultman and Jens Birch, Electronic-grade GaN(0001)/Al2O3(0001) grown by reactive DC-magnetron sputter epitaxy using a liquid Ga target, 2011, Applied Physics Letters, (98), 14, 141915.http://dx.doi.org/10.1063/1.3576912Copyright: American Institute of Physicshttp://www.aip.org

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Optical characterization of bulk GaN substrates with c ‐, a ‐, and m ‐plane surfaces

Cited by 8 publications

References 14 publications

Shallow donor and DX states of Si in AlN

Shallow donor and DX states of Si in AlN

Band-edge optical transitions in a nonpolar-plane GaN substrate: exciton–phonon coupling and temperature effects

Electronic-grade GaN(0001)/Al2O3(0001) grown by reactive DC-magnetron sputter epitaxy using a liquid Ga target

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