Optical characterization of carbon-doped Ga0.47In0.53As

Gerling, M.; Hamm, R. A.

doi:10.1016/s0022-2313(99)00155-6

Cited by 1 publication

(2 citation statements)

References 17 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…It is known that the Ge dopants in InGaP show amphoteric behavior with a compensation ratio of about 0.4. This amphoteric behavior changes the local stoichiometry [7] and causes a high density of dislocations [5]. Hence, the lower energy position and broader linewidth of sample A in comparison with sample B may originate from a poor crystallization due to the amphoteric property of Ge dopants [22].…”

Section: Resultsmentioning

confidence: 99%

“…The group-IV element can occupy either the III site, acting as a donor, or the V site, acting as an acceptor. This phenomenon is referred to as amphoteric behavior [5][6][7][8]. The amphoteric behavior of such dopants limits the further enhancement of high carrier concentrations and this problem has been overcome by co-doping with group-V and group-VI elements [9,10].…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Ellipsometric Study of Te and Ge Co-Doped In0.5Ga0.5P Alloys

Bahng

Lee

et al. 2001

phys. stat. sol. (a)

View full text Add to dashboard Cite

Subject classification: 71.55.Eq; 78.20.Ci; S7.11 Energy shifts of optical interband transition edges, E 0 0 , E 1 , E 1 þ D 1 , and E 2 , of Te and Ge codoped In 0:5 Ga 0:5 P alloys have been studied with varying the Te mole fraction in the solution using their complex dielectric functions measured by spectroscopic ellipsometry at room temperature. The interband transition edges were resolved by a line shape analysis on the numerical second derivative spectra of the dielectric functions. The E 1 and E 1 þ D 1 edges are found to shift to low energies with increasing doping concentration. It is interpreted as due to the doping-related bandgap renormalization.

show abstract

Section: Resultsmentioning

confidence: 99%