Optical Characterization of Cubic AlGaN/GaN Quantum Wells

Abstract

PACS: 78.55.Cr; 78.60.Hk; 81.15.Hi Cubic phase group III-nitrides were grown using RF plasma assisted Molecular Beam Epitaxy on GaAs (001) substrates. High-resolution X-ray diffraction, photoluminescence, cathodoluminescence and photoreflectance measurements were employed to characterize the structural and optical properties of GaN/Al x Ga 1--x N Multi Quantum Well (MQW) structures, in which both Aluminum content and well widths were varied. The observed quantized states are in agreement with first-principles based theoretical calculations.

Physical and technological analysis of the AlGaN-based UVC-LED: an extended discussion focused on cubic phase as an alternative for surface disinfection.

“…8 for different Al content in cubic QWs. Additional advantages of employing the cubic phase are the easier p-type doping, higher mobility, and perpendicular < 011 > cleavage directions [115]. To further enhance the efficiency, the QB must be designed in such a way that SRH recombination, tunneling leakage, and carrier overflow are mitigated [116].…”

Application of Quaternary AlInGaN- Based Alloys for Light Emission Devices

“…For all the other quantities, linear interpolations were taken using the values for the binaries, AlN, GaN, InN. The temperature dependence of bandgap energies was evaluated through the Varshni analytical expression as applied for GaN ( Kohler et al (2002)). …”

Cathodoluminescence, High‐Resolution X‐Ray Diffraction and Transmission‐Electron‐Microscopy Investigations of Cubic AlGaN/GaN Quantum Wells

“…The high energy peak is due to emission from the cubic Al 0.25 Ga 0.75 N [7] whereas the lower one is due to emission of quantized states from GaN QWs. [8]. In these samples the QW luminescence was tuned between 3.25 eV and 3.4 eV and the luminescence assigned to GaN QWs in this paper increases drastically with increasing number of incorporated QWs (not shown).…”

“…In addition, a simple quantum mechanical model was employed to calculate the optical transition energies. Taking into account that the GaN QWs are compressively strained, the observed transition energies are in excellent agreement with the theoretical calculations [8].…”