Optical characterization of InAs δ-layers grown by MBE at different substrate temperatures

Photoreflectance study of InAs ultrathin layer embedded in Si-delta-doped GaAs/AlGaAs quantum wells

“…Recently, HEMT structures with InAsinserted channel have been demonstrated on GaAs substrates [6][7][8][9][10]. To explore various physical properties of InAs HEMTs structures, numerous characterization methods have been applied, including X-ray techniques, transmission electron microscopy (TEM) and photoluminescence spectroscopy (PL) [11][12][13][14]. Most of the above methods require special conditions such as low temperature (PL) or special sample preparation (TEM).…”