Optical Characterization of Thin Films Exhibiting Defects

Ohlı́dal, Ivan; Čermák, Martin; Vohánka, Jiří

doi:10.1007/978-3-319-75325-6_10

Cited by 6 publications

(16 citation statements)

References 114 publications

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“…The value of the rms value of the heights σ needed to calculate the σ-dependent factors in (39) and ( 44) could be determined from the value of the specular reflectance. Within the SDT, the coherent part of specular reflectance of the randomly rough surface can be calculated as [31,41]…”

Section: Scalar Diffraction Theorymentioning

confidence: 99%

“…The Rayleigh-Rice theory (RRT) of the first and second orders belongs to the most utilized perturbation theories in practice (see e.g. [26][27][28][29][30][31][32][33]). For the quantities corresponding to scattered light the first order of this perturbation theory is mostly sufficient while the second order must be utilized for expressing the optical quantities belonging to coherent light.…”

Section: Introductionmentioning

confidence: 99%

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Characterization of randomly rough surfaces using angle-resolved scattering of light and atomic force microscopy

Šustek¹,

Vohánka²,

Ohlı́dal³

et al. 2021

J. Opt.

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The roughness of four samples of silicon single-crystal surfaces roughened by anodic oxidation is studied using atomic force microscopy (AFM) and angle-resolved scattering of light. The power spectral density functions (PSDFs) are determined on the basis of the measured values of the intensity of the scattered light. This is done on the basis of three models, which establish relation between the intensity of the light scattered in the given direction and the values of the PSDF at a certain spatial frequency. Two of the models are based on the scalar diffraction theory (SDT), while the third is based on the Rayleigh–Rice perturbation theory. The formulae corresponding to the SDT are derived in the theoretical part of the paper. The condition for the Fraunhofer diffraction is not satisfied if the values of the wavelength, distance to the detector and the dimensions of the illuminated spot on the sample used in the experiment are considered. However, it is shown that if the calculation of the intensity of the scattered light is performed in a certain way, then the validity of the expansion only up to the linear terms in the phase terms, i.e. in the same way as in the Fraunhofer diffraction, is not limited by the dimensions of the light spot but by the autocorrelation length of the randomly rough surface. The results obtained by the optical methods are compared with those obtained by AFM. It is shown that there is a good agreement between these results.

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Section: Scalar Diffraction Theorymentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Characterization of randomly rough surfaces using angle-resolved scattering of light and atomic force microscopy

Šustek¹,

Vohánka²,

Ohlı́dal³

et al. 2021

J. Opt.

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show abstract

“…Note that the associated ellipsometric parameters are the elements of the Mueller matrix for isotropic systems (see eg [34]). Of course, other ellipsometric quantities can be used to characterize thin films.…”

Section: Measurable Optical Quantities In Reflected Lightmentioning

confidence: 99%

Approximate methods for the optical characterization of inhomogeneous thin films: Applications to silicon nitride films

Ohlı́dal

Vohánka

Franta

et al. 2019

Journal of Electrical Engineering

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In this paper the overview of the most important approximate methods for the optical characterization of inhomogeneous thin films is presented. The following approximate methods are introduced: Wentzel–Kramers–Brillouin–Jeffreys approximation, method based on substituting inhomogeneous thin films by multilayer systems, method based on modifying recursive approach and method utilizing multiple-beam interference model. Principles and mathematical formulations of these methods are described. A comparison of these methods is carried out from the practical point of view, ie advantages and disadvantages of individual methods are discussed. Examples of the optical characterization of three inhomogeneous thin films consisting of non-stoichiometric silicon nitride are introduced in order to illustrate efficiency and practical meaning of the presented approximate methods.

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“…It is known that transition layers can appear at the boundaries between adjacent films in multilayered systems. Due to the relatively small thickness of such transition layers, it is challenging to distinguish individual layers by standard optical characterization in the studied multilayered systems . Vertical composition variations of ca .…”

Section: Introductionmentioning

confidence: 99%

“…Due to the relatively small thickness of such transition layers, it is challenging to distinguish individual layers by standard optical characterization in the studied multilayered systems. 19 Vertical composition variations of ca. 100 nm length scale was experimentally observed in 300 nm-thick SiO x N y layers sputtered by two rotatable magnetrons, using glow discharge optical emission spectroscopy and secondary ion mass spectroscopy.…”

Section: Introductionmentioning

confidence: 99%

Periodic density fluctuations in sputtered aluminum‐doped silicon oxynitride layers

Роч

Šimurka²,

Ow‐Yang

et al. 2019

Int J of Appl Glass Sci

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Magnetron sputtering is widely used for deposition of silicon oxynitride (SiOxNy) coatings on glass in large‐area applications. Since repeated deposition simulates the factory‐scale in‐line processing, amorphous aluminum‐doped SiOxNy layers with thickness of about 250 nm were deposited by reactive pulsed DC sputtering in a multi‐pass process with repeated linear movement of a glass substrate under an Al‐alloyed Si target. Using specular X‐ray reflectivity we show periodic fluctuations of the material density throughout the entire thickness of the resulting coating. The number of periods corresponds to the number of passes of the substrate through the plasma of the magnetron. Fitting results suggest a model consistent with a periodic alternation of the O/N ratio. These subtle stoichiometric fluctuations in the SiOxNy layer composition were confirmed by scanning transmission electron microscopy analysis with nanoscale resolution, and with detailed elemental maps of characteristic X‐rays of the layered cross‐section. Our study demonstrates the superior sensitivity of the relatively simple nondestructive X‐ray reflectivity method for industrial line‐process inspection compared to ellipsometry.

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Optical Characterization of Thin Films Exhibiting Defects

Cited by 6 publications

References 114 publications

Characterization of randomly rough surfaces using angle-resolved scattering of light and atomic force microscopy

Characterization of randomly rough surfaces using angle-resolved scattering of light and atomic force microscopy

Approximate methods for the optical characterization of inhomogeneous thin films: Applications to silicon nitride films

Periodic density fluctuations in sputtered aluminum‐doped silicon oxynitride layers

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