Optical characterization of vacuum evaporated cadmium sulfide films

Pal, Umapada; Silva‐González, R.; Martínez-Montes, G.; Gracia-Jiménez, M.; Vidal, M. A.; Torres, Sh.

doi:10.1016/s0040-6090(97)00124-7

Cited by 100 publications

(42 citation statements)

References 32 publications

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“…This is suggestive of a change in the optical band gap. Such a shift has been widely reported and is attributed to the cubic-hexagonal transitions taking place in the CdS film structure [45]. In a greater context, the multiwavelength analysis testifies that the ion-by-ion deposition mechanism favors the crystallization of highly symmetric structures, whereas the cluster-by-cluster deposition mechanism tends to produce asymmetry in crystallization and deviation from stoichiometry.…”

Section: Thin Films Of Cds Fabricated Under Various Deposition Mechanmentioning

confidence: 73%

Efficient Optimization of the Optoelectronic Performance in Chemically Deposited Thin Films

Slonopas¹,

Dhar²,

Ryan³

et al. 2017

Thin Film Processes - Artifacts on Surface Phenomena and Technological Facets

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Chemical deposition methodology is a well-understood and highly documented category of deposition techniques. In recent years, chemical bath deposition (CBD) and chemical vapor deposition (CVD) have garnered considerable attention as an effective alternative to other deposition methods. The applicability of CVD and CBD for industrial-sized operations is perhaps the most attractive aspect, in that thin-film deposition costs inversely scale with the processing batch size without loss of desirable optoelectronic properties in the materials. A downside of the method is that the optoelectronic characteristics of these films are highly susceptible to spurious deposition growth mechanisms. For example, increasing the temperature of the chemical deposition bath can shift the deposition mechanisms from ion-by-ion (two dimensional) precipitation to bulk solution cluster-by-cluster (three dimensional) formation which then deposit. This drastically changes the structural, optical, and electrical characteristics of CBD-deposited thin films.A similar phenomenon is observed in CVD deposited materials. Thus, it is of great interest to study the coupling between the deposition parameters and subsequent effects on film performance. Such studies have been conducted to elucidate the correlation between growth mechanisms and film performance. Here, we present a review of the current literature demonstrating that simple changes can be made in processing conditions to optimize the characteristics of these films for optoelectronic applications.

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Section: Thin Films Of Cds Fabricated Under Various Deposition Mechanmentioning

confidence: 73%

Efficient Optimization of the Optoelectronic Performance in Chemically Deposited Thin Films

Slonopas¹,

Dhar²,

Ryan³

et al. 2017

Thin Film Processes - Artifacts on Surface Phenomena and Technological Facets

View full text Add to dashboard Cite

show abstract

“…The grain size and configuration of the pyrolytic deposited quaternary thin films are dependent on many parameters such as deposition time, temperature of substrate, nature of substrate, etc. [20]. The film has a desirable stability which can be employed in photovoltaic applications.…”

Section: Energy [Kev] Thin Films By Mocvd Techniquementioning

confidence: 99%

Optical and Electrical Properties of Copper Doped Cadmium Oxy-Sulphide Quaternary Thin Films by MOCVD Technique

Ayinde¹

2017

IJMSA

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Abstract:A prepared single solid source precursor was used for the deposition of copper doped oxy-sulphide thin films on glass substrate by MOCVD technique. This was achieved by the pyrolysis of the prepared precursors at 420°C with a flow rate of 2.5 dm 3 /min for 2 hours. The deposited films were characterized using Rutherford Backscattering Spectroscopy (RBS), Scanning Electron Microscopy (SEM), UV-visible spectrophotometry and four point probe method. RBS analysis showed that the expected elements are present while the thickness was estimated to be 889 nm. The SEM images of the deposited film showed a fine structure with densely packed grains of uniform grain size of about 80 nm, well distributed throughout the entire substrate which is polycrystalline in nature. The film revealed an average transmittance of 80% in the visible region with a direct bandgap of 2.41 eV. The absorbance of the film was observed to be low in the visible and near-infrared regions, and high in UV region. The values of 1. 17 × 10 Ω/□ and 10.40 Ω were obtained as the sheet resistance and resistivity of the film respectively. The deposited quaternary thin film is found to be a promising candidate as window layer and absorber layer for cost effective photovoltaics.

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“…Almost all such elements are semiconductors, which find application in photoelectric and other types of appliances. [1][2][3][4][5][6][7] Progressive development in colloidal science dramatically influence the growth of cost effective and high efciency solar cells. High optoelectronic phase synthesis has emerged well due to its factors of mono-dispersity, passiveness and non-aggregated behavior.…”

Section: Introductionmentioning

confidence: 99%

Preparation and Characterization of CdS Thin Films Prepared by Chemical Bath Deposition Route

Manda¹,

Prabahar²,

Karunanithi³

et al. 2018

IJMNP

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Cadmium sulphide is an extensive energy gap semiconductor, which has gained significance, since it is widely used in window layers in photovoltaic cells, gas sensors, antireflection coating, photo detectors, resistors, capacitors, transistors, and semiconductors for optoelectronic devices. CdS is an n-type compound with 2.4eV energy gap. Chemical Bath Deposition (CBD) method along with micro glass substrates is used in the preparation of CdS thin films at 80 • C with constant pH (10). X-ray diffraction patterns for CBD CdS thin films confirm that the peaks are finely coordinated with JCPDS data and exhibit cubic structure. The intensity of preferentially oriented direction of (200) plane increases with increase in deposition time period. Several structural aspects like grain size, strain and dislocation density of CdS films are determined depending on deposition time periods. Studies based on the optical properties of CdS thin films are conducted using absorbance spectra. The film directly transits at 2.48 eV. The deposition conditions can control the optical gap of the material. Due to such factors in the CdS films, they are opted for several optoelectronic and device applications.

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Optical characterization of vacuum evaporated cadmium sulfide films

Cited by 100 publications

References 32 publications

Efficient Optimization of the Optoelectronic Performance in Chemically Deposited Thin Films

Efficient Optimization of the Optoelectronic Performance in Chemically Deposited Thin Films

Optical and Electrical Properties of Copper Doped Cadmium Oxy-Sulphide Quaternary Thin Films by MOCVD Technique

Preparation and Characterization of CdS Thin Films Prepared by Chemical Bath Deposition Route

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