Optical constants of silver and copper indium ternary sulfides from infrared reflectivity measurements

Gasanly, Nizami

doi:10.1016/j.infrared.2015.12.010

Cited by 7 publications

(7 citation statements)

References 22 publications

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“…Due to the resonant nature of Raman spectra in this work and the nonstoichiometrical phases, they may contain modes that are expected in the IR spectra only. The experimental IR spectra of the Ag–In–S and Cu–In–S NCs reveal main features (227, 300, and 345 cm –1 ) in the same range as the Raman spectra, but, compared to Raman spectra, they show more similarity between the two compounds and with spectra of bulk MInS 2 and MIn 5 S 8 from the literature. ,,− …”

Section: Resultsmentioning

confidence: 62%

“…The main IR modes of bulk AgIn 5 S 8 occur at 83, 207, 278, and 313 cm −1 . 82 Less characteristic is the IR mode at 225 cm −1 (also in Raman), which is related to the vibration of In−S bonds common for all the three compounds. Only at λ exc = 785 nm we observe a shift of this feature to 220 cm −1 for Ag−In−S and to 230 cm −1 for Cu−In−S (Figure 4a).…”

Section: ■ Results and Discussionmentioning

confidence: 99%

“…In particular, the highest-frequency and strongest IR mode of Ag–In–S NCs, at 352 cm –1 , and of Hg–In–S NCs, at 335 cm –1 , correlate well with the corresponding position of Raman peaks at 340–350 cm –1 and their assignment to polar (LO) modes of tetragonal-like M–In-S rather than A-mode of MIn 5 S 8 . The main IR modes of bulk AgIn 5 S 8 occur at 83, 207, 278, and 313 cm –1 …”

Section: Resultsmentioning

confidence: 99%

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Phonon Spectra of Strongly Luminescent Nonstoichiometric Ag–In–S, Cu–In–S, and Hg–In–S Nanocrystals of Small Size

et al. 2020

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We present a detailed analysis of Raman and infrared (IR) phonon spectra of strongly luminescent nonstoichiometric M−In−S (M = Cu, Ag, Hg) and core/shell M−In-S/ZnS nanocrystals (NCs) of small size (d ≈ 2−4 nm), formed by means of aqueous colloidal chemistry under mild conditions. Despite presumably similar factors determining position and broadening of the Raman and X-ray diffraction (XRD) peaks, phonon spectra are shown to be more sensitive to NC composition and crystals structure. The spectral Raman pattern of these strongly Mdeficient M−In-S NCs is different from that of the corresponding stoichiometric phases, e.g., CuInS 2 or AgIn 5 S 8 , and excludes its assignment to relevant binary sulfides, e.g., In 2 S 3 . Resonant behavior of relative peak intensities in Raman spectra is different from that of larger-size stoichiometric NCs and bulk samples studied before, while the temperature dependence reveals an analogous enhancement of the highest-frequency LO modes supporting an unambiguous assignment of the latter. Therefore, we conclude that the Raman spectra observed are characteristic of the specific structure of these highly nonstoichiometric small NCs. IR modes of these NCs occur in the same frequency range as the Raman ones but at higher frequencies than the IR phonons in bulk material. The IR spectra are less characteristic, compared to Raman ones, revealing more similarity among the three NC compounds and with the bulk counterparts.

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Section: Resultsmentioning

confidence: 62%

Section: ■ Results and Discussionmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

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Phonon Spectra of Strongly Luminescent Nonstoichiometric Ag–In–S, Cu–In–S, and Hg–In–S Nanocrystals of Small Size

et al. 2020

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“…AgIn 5 Se 8 (AIS), an n-type ternary semiconductor, [29] has a direct bandgap of 1.25 eV, [30] which enables photons to be excited from the valence band to the conduction band without the assistance of phonons. [31][32][33][34][35] Furthermore, AIS shows a high absorption coefficient, high optical conductivity and excellent light stability, which indicates that AIS demonstrates photodetection performance. [36][37][38] In our previous study, a AgIn 5 Se 8 /FePSe 3 heterojunction photodetector exhibited a fast photoresponse under broad spectral irradiation from 365 nm to 1020 nm.…”

Section: Introductionmentioning

confidence: 99%

A fast-response self-powered UV–Vis–NIR broadband photodetector based on a AgIn₅Se₈/t-Se heterojunction

Li 李,

Xu 许,

Lu 陆

et al. 2023

Chinese Phys. B

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Type II p-n heterojunction could improve the photodetecting performance of a photodetector due to the excellent ability of carrier separation. N-type AgIn5Se8 (AIS) exhibits a large optical absorption coefficient, high optical conductivity and suitable bandgap, which shows potential application in broadband photodetecting. Even though our previous study on AgIn5Se8/FePSe3 exhibited a good response speed, it still gave low responsivity due to the poor quality of p-type FePSe3 thin-film. Se with a direct bandgap (around 1.7 eV), p-type conductivity, high electron mobility and high carrier density is likely to form a low dimensional structure, which leads to the increase of effective contact area of the heterojunction and further improves the photodetector performance. In this work, continuous and dense t-Se thin-film was prepared by electrochemical deposition. The self-powered AgIn5Se8/t-Se heterojunction photodetector exhibited a broadband detecting range from 365 to 1200 nm. The responsivity and detectivity of the heterojunction photodetector are 32 mA/W and 1.8×109 Jones, respectively, which show around 9 and 4 times higher than the AgIn5Se8/FePSe3 heterojunction photodetector. The main reason is due to the good quality of the t-Se thin-film and the formation of the low dimensional t-Se nanoribbons, which optimized the transport pathway of carriers. The results indicate that AgIn5Se8/t-Se heterojunction proves to be an excellent candidate for broadband and self-powered photoelectronic devices.

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“…8,15,16 Generally composition of elements in these compounds as well as its synthesis method can suggest either it is N-type or P-type semi-conductor having band gaps appropriate for light absorption in solar or photo-electrochemical cells. 17,18 These compounds have wide range applications in different fields, for example, manufacturing of light emitting diodes, photovoltaic and photo-electrochemical cells and in other optical devices 8,15,17,[19][20][21][22] also having applications in ferro-electricity and super conductivity. 15,20,23 As these are environment friendly compounds, so these can be used as absorbers.…”

Section: Introductionmentioning

confidence: 99%

Structural, electronic and optoelectronic properties of AB ₅ C ₈ ( A = Cu/Ag; B = In and C = S, Se and Te ) compounds

et al. 2020

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Summary Ternary semiconductors AB5C8 (A = Cu/Ag, B = In and C = S, Se or Te) have been investigated. The CuIn5S8 and AgIn5S8 have been synthesize in cubic spinel structure with space group (Fd3m), whereas CuIn5Se8, AgIn5Se8, CuIn5Te8 and AgIn5Te8 have tetragonal structures with space group P‐42m. The relaxed crystal geometry, electrical properties such as electronic band structure and optoelectronic properties are predicted by using full potential method in this work. For the determination of relaxed crystal geometry, the gradient approximation (PBE‐GGA) is used. All the studied compounds are semiconductors based on their band structures in agreement with the experimental results, and their bulk moduli are in the range 35 to 69 GPa. Wide absorption peaks appeared in the visible to ultraviolet energy region indicating good absorption ability of these compounds. Therefore, these semiconductors are an excellent choice for optical devices, electrochemical and photovoltaic cells. These compounds have remarkable characteristics such as direct as well as indirect band gaps with very slight difference between the two, high absorption coefficient, good photo‐stability, easy inter‐conversion between n‐ and p‐type semiconductors and in manufacturing of comparatively cheap homo and hetero junction structures. AB5C8 (A = Cu/Ag; B = In and C = S, Se, Te) compounds have shown high absorption and optical conductivity in the visible region. These compounds have therefore high potential to be used as solar energy harvesting. Also these systems are optical active in the ultraviolet region too therefore can be used for high frequency optoelectronics applications.

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Optical constants of silver and copper indium ternary sulfides from infrared reflectivity measurements

Cited by 7 publications

References 22 publications

Phonon Spectra of Strongly Luminescent Nonstoichiometric Ag–In–S, Cu–In–S, and Hg–In–S Nanocrystals of Small Size

Phonon Spectra of Strongly Luminescent Nonstoichiometric Ag–In–S, Cu–In–S, and Hg–In–S Nanocrystals of Small Size

A fast-response self-powered UV–Vis–NIR broadband photodetector based on a AgIn₅Se₈/t-Se heterojunction

Structural, electronic and optoelectronic properties of AB ₅ C ₈ ( A = Cu/Ag; B = In and C = S, Se and Te ) compounds

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Optical constants of silver and copper indium ternary sulfides from infrared reflectivity measurements

Cited by 7 publications

References 22 publications

Phonon Spectra of Strongly Luminescent Nonstoichiometric Ag–In–S, Cu–In–S, and Hg–In–S Nanocrystals of Small Size

Phonon Spectra of Strongly Luminescent Nonstoichiometric Ag–In–S, Cu–In–S, and Hg–In–S Nanocrystals of Small Size

A fast-response self-powered UV–Vis–NIR broadband photodetector based on a AgIn5Se8/t-Se heterojunction

Structural, electronic and optoelectronic properties of AB 5 C 8 ( A = Cu/Ag; B = In and C = S, Se and Te ) compounds

Contact Info

Product

Resources

About

A fast-response self-powered UV–Vis–NIR broadband photodetector based on a AgIn₅Se₈/t-Se heterojunction

Structural, electronic and optoelectronic properties of AB ₅ C ₈ ( A = Cu/Ag; B = In and C = S, Se and Te ) compounds