2011
DOI: 10.1117/12.895531
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Optical control of THz reflectivity with surface waves

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“…The dielectric constants of GaAs and Al x Ga 1-x As are important parameters for designing and analyzing the terahertz band devices, and free carrier absorption plays a significant role in the terahertz optical properties of Al x Ga 1-x As film materials [34]. The free carrier optical properties of GaAs and the dielectric constant response function of thin film samples can be reasonably described using the Drude model [35] and the Lorenz-Drude model [36]. The optical properties of p-type Al x Ga 1-x As epitaxial film with beryllium and carbon doping concentrations of 10 18 -10 19 cm −3 have been investigated by far-infrared reflectance spectroscopy in the frequency range of 1.5-15 THz [37].…”
Section: Dielectric Constant Analysis Of Gaas and Alxga1-xasmentioning
confidence: 99%
“…The dielectric constants of GaAs and Al x Ga 1-x As are important parameters for designing and analyzing the terahertz band devices, and free carrier absorption plays a significant role in the terahertz optical properties of Al x Ga 1-x As film materials [34]. The free carrier optical properties of GaAs and the dielectric constant response function of thin film samples can be reasonably described using the Drude model [35] and the Lorenz-Drude model [36]. The optical properties of p-type Al x Ga 1-x As epitaxial film with beryllium and carbon doping concentrations of 10 18 -10 19 cm −3 have been investigated by far-infrared reflectance spectroscopy in the frequency range of 1.5-15 THz [37].…”
Section: Dielectric Constant Analysis Of Gaas and Alxga1-xasmentioning
confidence: 99%