Optical Design of Dilute Nitride Quantum Wells Vertical Cavity Semiconductor Optical Amplifiers for Communication Systems

Abstract

Abstract-III-V semiconductors components such as Gallium Arsenic (GaAs), Indium Antimony (InSb), Aluminum Arsenic (AlAs) and Indium Arsenic (InAs) have high carrier mobilities and direct energy gaps. This is making them indispensable for today's optoelectronic devices such as semiconductor lasers and optical amplifiers at 1.3 µm wavelength operation. In fact, these elements are led to the invention of the Gallium Indium Nitride Arsenic (GaInNAs), where the lattice is matched to GaAs for such applications. This article is aimed to design dilute nitride GaInNAs quantum wells (QWs) enclosed between top and bottom of Aluminum (Gallium) Arsenic Al(Ga)As distributed bragg mirrors (DBRs) using MATLAB® program. Vertical cavity semiconductor optical amplifiers (VCSOAs) structures are based on Fabry Perot (FP) method to design optical gain and bandwidth gain to be operated in reflection and transmission modes. The optical model gives access to the contact layer of epitaxial structure and the reflectivity for successive radiative modes, their lasing thresholds, emission wavelengths and optical field distributions in the laser cavity.

Design, Modeling, and Characterization of Hot Electron Light Emission and Lasing in Semiconductor Heterostructure-VCSOA with Optical Gain up to 36 dB

“…7 illustrates the material gain against the carrier density curve for GaInNAs/GaAs QW active region. The gain was calculated using the Equation 3, which recommended a fit parameter of g 0 =3650 cm -1 and transparency carrier density parameter of N tr =1.8×10 18 cm -3 (Chaqmaqchee, 2016). The material gain depends on QW of carrier density and its logarithmic inclination, but this model allows for an accurate description of the material gain at low carrier densities.…”

“…The VCSOA (Bjorlin, 2002;Gauss, et al, 2011) can be amended into hot electron light emission and lasing in semiconductor heterostructure (HELLISH)-VCSOA structure, which differs from the HELLISH-VCSEL structure by reducing the number of top DBR layers (Wah and Balkan, 2004;Chaqmaqchee, 2016). HILLISH-VCSOA is a device that utilizes hot carrier transport parallel to the layers of the p-n junction.…”

Performance Characteristics of Conventional Vertical Cavity Surface Emitting Lasers VCSELs at 1300 nm

“…The Raycan VCSEL coded RC220151-FFP-11333113 is a commercially available device at emitting wavelength of 1336 nm. A more detail of design devices description can be found elsewhere (Piprek, J. et al, 2001, Chaqmaqchee 2016& Spiewak et al, 2018. VCSELs were designed for high-speed, high-performance communication applications, and have great interest for coarse wavelength-division multiplexing (CWDM) band applications in optical fiber communication technology.…”

An Ultra-wideband Low-power Low-noise Amplifier Linearized by Adjusted Derivative Superposition and Feedback Techniques

“…One of the frequently used blocks in wireless receiver systems is low-noise amplifiers (LNAs) (Nakhlestani, Hakimi, and Movahhedi, 2012;Hu, et al, 2014;Kim, 2009). There are many technologies to implement the LNAs, such as optical amplifiers (Chaqmaqchee, 2016;Yaba and Chaqmaqchi, 2022) or CMOS technology (Mohebi, et al, 2020). The most important characteristics of the LNAs include low noise, high linearity, and highpower gain.…”