Optical Determination of the Heavy-hole Effective Mass of (In, Ga)As/ GaAs Quantum Wells

Lee, Kyu-Seok Lee; Lee, El-Hang Lee

doi:10.4218/etrij.96.0196.0042

Cited by 11 publications

(8 citation statements)

References 18 publications

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“…The calculated, direct band gap, at the equilibrium lattice constant, is 1.520 eV, at the Г point. This result of 1.520 eV is in excellent agreement with the low temperature experimental value of 1.519 eV, reported by four different, experimental groups 6,[8][9][10]. Our calculated bulk modulus of 75.49 GPa also agrees with the experimental values of 75.5 and 74.7 GPa 56,58.…”

supporting

confidence: 92%

“…As per the content of this table, the consensus experimental band gap, at low temperature, is 1.519 eV. [8][9][10] Numerous theoretical results have been reported for the band gap of GaAs. Our focus on the band gap stems from its importance in describing several other properties of semiconductors [AIP Advances]; in particular, a wrong bang gap precludes agreements between peaks in the calculated densities of states, dielectric functions, and optical transition energies with their experimental counterparts.…”

Section: Introductionmentioning

confidence: 99%

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Accurate Electronic, Transport, and Bulk Properties of Zinc Blende Gallium Arsenide (Zb-GaAs)

Diakite¹,

Traore²,

Malozovsky³

et al. 2017

JMP

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We report accurate, calculated electronic, transport, and bulk properties of zinc blende gallium arsenide (GaAs). Our ab-initio, non-relativistic, self-consistent calculations employed a local density approximation (LDA) potential and the linear combination of atomic orbital (LCAO) formalism. We strictly followed the Bagayoko, Zhao, and William (BZW) method, as enhanced by Ekuma and Franklin (BZW-EF). Our calculated, direct band gap of 1.429 eV, at an experimental lattice constant of 5.65325 Å, is in excellent agreement with the experimental values. The calculated, total density of states data reproduced several experimentally determined peaks. We have predicted an equilibrium lattice constant, a bulk modulus, and a low temperature band gap of 5.632 Å, 75.49 GPa, and 1.520 eV, respectively. The latter two are in excellent agreement with corresponding, experimental values of 75.5 GPa (74.7 GPa) and 1.519 eV, respectively. This work underscores the capability of the local density approximation (LDA) to describe and to predict accurately properties of semiconductors, provided the calculations adhere to the conditions of validity of DFT.

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supporting

confidence: 92%

Section: Introductionmentioning

confidence: 99%

Accurate Electronic, Transport, and Bulk Properties of Zinc Blende Gallium Arsenide (Zb-GaAs)

Diakite¹,

Traore²,

Malozovsky³

et al. 2017

JMP

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“…While this error is not small enough in comparison with E eb , it is on the same level as that of other methods. The values obtained from PPT measurements made on GaInAs, i.e., a known material, agree with the values in other reports [20][21][22] to within the experimental error. Systematic measurements are generally useful for reducing the influence of experimental errors.…”

supporting

confidence: 90%

Reduced Static Dielectric Constant Estimated from Exciton Binding Energy in Dilute Nitride Semiconductors

Kondow

Uchiyama

Morifuji

et al. 2009

Appl. Phys. Express

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Dilute nitrides are novel III–V semiconductors that have been developed for photonic and electronic devices. Although they have been investigated, some of their characteristics have not been established yet. In this study, the static dielectric constant of dilute nitrides was experimentally estimated from the exciton binding energy. The results imply that nitrogen incorporation in III–V semiconductors decreases both the static dielectric constant and bandgap. This behavior is opposite to that of conventional semiconductors.

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“…The limiting 3D value is thus expected to be reached for larger n -value, i.e., when the RPP bandgap equals the 3D perovskite one. Furthermore, electronic band mixing and non-parabolicity effects have been known to induce changes in the exciton reduced mass in quantum well systems 32–35 . These effects have also been discussed in classic inorganic semiconductors and agree with the n -value dependence of the experimental bandgap, diamagnetic shift and g -factor (Figs.…”

Section: Resultsmentioning

confidence: 99%

Scaling law for excitons in 2D perovskite quantum wells

et al. 2018

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Ruddlesden–Popper halide perovskites are 2D solution-processed quantum wells with a general formula A2A’n-1MnX3n+1, where optoelectronic properties can be tuned by varying the perovskite layer thickness (n-value), and have recently emerged as efficient semiconductors with technologically relevant stability. However, fundamental questions concerning the nature of optical resonances (excitons or free carriers) and the exciton reduced mass, and their scaling with quantum well thickness, which are critical for designing efficient optoelectronic devices, remain unresolved. Here, using optical spectroscopy and 60-Tesla magneto-absorption supported by modeling, we unambiguously demonstrate that the optical resonances arise from tightly bound excitons with both exciton reduced masses and binding energies decreasing, respectively, from 0.221 m0 to 0.186 m0 and from 470 meV to 125 meV with increasing thickness from n equals 1 to 5. Based on this study we propose a general scaling law to determine the binding energy of excitons in perovskite quantum wells of any layer thickness.

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Optical Determination of the Heavy-hole Effective Mass of (In, Ga)As/ GaAs Quantum Wells

Cited by 11 publications

References 18 publications

Accurate Electronic, Transport, and Bulk Properties of Zinc Blende Gallium Arsenide (Zb-GaAs)

Accurate Electronic, Transport, and Bulk Properties of Zinc Blende Gallium Arsenide (Zb-GaAs)

Reduced Static Dielectric Constant Estimated from Exciton Binding Energy in Dilute Nitride Semiconductors

Scaling law for excitons in 2D perovskite quantum wells

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