Optical devices from AlGaAs-GaAs HBTs heavily doped with amphoteric Si

Arai, Y.; Sakuta, Masaaki; Takano, Hiroshi; Ushikubo, T.; Furukawa, R.; Kobayashi, M.

doi:10.1109/16.372066

Cited by 6 publications

(2 citation statements)

References 13 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Such directions lead to the “Beyond CMOS” technology. GaAs can also be used to fabricate other functional devices such as RF detectors and rectennas (ex: this work), optical devices and sensors to be integrated with conventional Si CMOS and other Si based functional devices such RF-CMOS, NEMS etc to realize the IQ chip concept [ 29 ]. Therefore, the value of hybridization of GaAs and Si technologies is apparent.…”

Section: Importance Of Gaas Based Chip Structure On Si Platform and Imentioning

confidence: 99%

Dual-Functional On-Chip AlGaAs/GaAs Schottky Diode for RF Power Detection and Low-Power Rectenna Applications

Hashim

Mustafa

Rahman

et al. 2011

Sensors

View full text Add to dashboard Cite

A Schottky diode has been designed and fabricated on an n-AlGaAs/GaAs high-electron-mobility-transistor (HEMT) structure. Current-voltage (I–V) measurements show good device rectification, with a Schottky barrier height of 0.4349 eV for Ni/Au metallization. The differences between the Schottky barrier height and the theoretical value (1.443 eV) are due to the fabrication process and smaller contact area. The RF signals up to 1 GHz are rectified well by the fabricated Schottky diode and a stable DC output voltage is obtained. The increment ratio of output voltage vs input power is 0.2 V/dBm for all tested frequencies, which is considered good enough for RF power detection. Power conversion efficiency up to 50% is obtained at frequency of 1 GHz and input power of 20 dBm with series connection between diode and load, which also shows the device’s good potential as a rectenna device with further improvement. The fabricated n-AlGaAs/GaAs Schottky diode thus provides a conduit for breakthrough designs for RF power detectors, as well as ultra-low power on-chip rectenna device technology to be integrated in nanosystems.

show abstract

Section: Importance Of Gaas Based Chip Structure On Si Platform and Imentioning

confidence: 99%

Dual-Functional On-Chip AlGaAs/GaAs Schottky Diode for RF Power Detection and Low-Power Rectenna Applications

Hashim

Mustafa

Rahman

et al. 2011

Sensors

View full text Add to dashboard Cite

show abstract

“…1-4 Furthermore, they have been used widely for monolithic microwave integrated circuit ͑MMIC͒ and optoelectronic integrated circuit ͑OEIC͒ applications in recent years. 5,6 In previous studies of GaAs-based HBTs, the InGaP-GaAs and AlGaAs-GaAs material systems were usually employed. The Al X Ga 1−X As/ GaAs material system showed some advantages such as excellent lattice match with varied aluminum content and mature epitaxial growth technology.…”

Section: Introductionmentioning

confidence: 99%

Characteristics of an InGaP/AlXGa1−XAs/GaAs composite-emitter heterojunction bipolar transistor (CEHBT)

Cheng

Chu

Chen

et al. 2008

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

View full text Add to dashboard Cite

The characteristics of an interesting InGaP/AlXGa1−XAs/GaAs composite-emitter heterojunction bipolar transistor (CEHBT) are studied and demonstrated. By employing an AlXGa1−XAs graded layer between an InGaP emitter and GaAs base layer, a nearly zero conduction-band discontinuity can be obtained. Owing to the complete disappearance of the potential spike at the emitter/base hetero-interface, our CEHBT with AlXGa1−XAs graded layer exhibited good dc performance with current gains of 280 and 11 at collector currents of IC=12.6 mA and 0.2 nA, respectively. Furthermore, our CEHBT also shows a lower offset voltage and collector and base current ideality factors. In microwave characteristics, for a 3×20 μm2 device, the unit current gain cutoff frequency fT and maximum oscillation frequency fmax are 41.3 and 35.4 GHz, respectively. Consequently, this work provides promise for high-performance analog, digital, and microwave device applications.

show abstract

Unexpected two-step response in AlGaAs/GaAs heterostructure-based SBD

Chatterjee

Mahata

2019

International Journal of Electronics Letters

View full text Add to dashboard Cite

Optical devices from AlGaAs-GaAs HBTs heavily doped with amphoteric Si

Cited by 6 publications

References 13 publications

Dual-Functional On-Chip AlGaAs/GaAs Schottky Diode for RF Power Detection and Low-Power Rectenna Applications

Dual-Functional On-Chip AlGaAs/GaAs Schottky Diode for RF Power Detection and Low-Power Rectenna Applications

Characteristics of an InGaP/AlXGa1−XAs/GaAs composite-emitter heterojunction bipolar transistor (CEHBT)

Unexpected two-step response in AlGaAs/GaAs heterostructure-based SBD

Contact Info

Product

Resources

About