Optical, electrical, and catalytic (photo-and sono-) properties of indium doped γ-Bi2O3 with Sillenite structure

Nagarajan, Rajamani; Shrivastava, Vipul; Pandey, Jyoti

doi:10.1016/j.jallcom.2021.161466

Cited by 6 publications

(3 citation statements)

References 48 publications

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“…Comparing the respective values for all the compositions (Table 2) one can assume that the transition type is direct for the investigated samples. This contrasts with the theoretically calculated bandgap energy of 1.87 eV 45 for an indirect transition in γ‐Bi 2 O 3 , however, corresponds to earlier experimental findings 46 . The bandgap energy slightly increases with increasing indium content up to x = 0.10 in the structure, as shown in Figure 9.…”

Section: Resultscontrasting

confidence: 77%

“…This contrasts with the theoretically calculated bandgap energy of 1.87 eV 45 for an indirect transition in γ-Bi 2 O 3 , however, corresponds to earlier experimental findings. 46 The bandgap energy slightly increases with increasing indium content up to x = 0.10 in the structure, as shown in Figure 9. Deng et al 45 demonstrated a comparable change of bandgap energies due to filling the oxygen vacancies.…”

Section: Spectroscopymentioning

confidence: 86%

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Indium containing sillenite semiconductor: Synthesis, structural, spectroscopic, and thermogravimetric analysis

2023

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Sillenite-type ceramics are non-centrosymmetric phases of ongoing research interest because of their structural defects and optoelectronic properties. We report a series of sillenite compounds with a general composition Bi 12 (Bi 3+ 4/5−3x In 3+ 5x □ 1/5−2x )O 19.2+3x □ 0.8−3x for x = 0.03-0.27 to understand how the crystal-physicochemical properties change with a successive filling of empty Bi 3+ positions in the tetrahedral site by In 3+ cation. Conventional solidstate synthesis method is used to prepare the microcrystalline samples. Each sample is characterized by X-ray diffraction, Raman, UV/Vis diffuse reflectance spectroscopy, and thermogravimetry (TG/DSC). X-ray powder data Rietveld refinement reveals that phase-pure samples can be obtained for x = 0.03-0.08 in the space group I23. Appearance of starting In 2 O 3 as minor phases with the final products for 0.10 < x < 0.27 suggests for x max = 0.08. The successive decrease of the lattice parameter indicates the incorporation of smaller In 3+ cations in the structure. The effect of the lone electron pairs of Bi 3+ and the structural cation vacancies lead to the modification of the interatomic bond lengths. At least one Raman active phonon mode shows hardening for decreasing cation vacancy concentration in the system. The bandgap energy increases with increasing indium content. An additional absorption band at lower energy for x = 0.03-0.08 complements the theoretical study, which completely disappears for x > 0.08. The stronger In-O bonds play pivotal roles in the thermal stability of the phases studied by TGA/DSC analysis.

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Section: Resultscontrasting

confidence: 77%

Section: Spectroscopymentioning

confidence: 86%

Indium containing sillenite semiconductor: Synthesis, structural, spectroscopic, and thermogravimetric analysis

2023

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“…17 The metastable γ-Bi 2 O 3 has a higher photocatalytic activity due to a special cage-type structure and various surface defects. 18,19 The photocatalytic degradation efficiency of the Rhodamine B was 95.6% using the γ-Bi 2 O 3 , which was much higher than the 42.3% of α-Bi 2 O 3 . 20 The γ-Bi 2 O 3 possessed a CO generation rate of 48.10 μmol h −1 g −1 , which was 1.62 times higher than that of β-Bi 2 O 3 .…”

Section: Introductionmentioning

confidence: 95%

Nanosheets loaded on tetrahedral surfaces form a Z-type Bi₂MoO₆/γ-Bi₂O₃ heterojunction to enhance the photocatalytic degradation activity of lomefloxacin and Rhodamine B

Ding

Qian

et al. 2022

Dalton Trans.

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Vacancy Suppression and Resonant Level Rendering Extraordinary Power Factor in Sn_0.99In_0.01Te/Tourmaline Composite

Li,

Wang,

Abbas

et al. 2024

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SnTe, as a potential medium‐temperature thermoelectric material, reaches a maximum power factor (PF) usually above 750 K, which is not conducive to continuous high‐power output in practical applications. In this study, PF is maintained at high values between 18.5 and 25 µW cm−1 K−2 for Sn0.99In0.01Te−x wt% tourmaline samples within the temperature range of 323 to 873 K, driving the highest PFeng of 1.2 W m−1 K−1 and PFave of 22.5 µW cm−1 K−2, over 2.5 times that of pristine SnTe. Such an extraordinary PF is attributed to the synergy of resonant levels and Sn vacancy suppression. Specifically, the Seebeck coefficient increases dramatically, reaching 88 µV K−1 at room temperature. Meanwhile, by Sn vacancy suppression, carrier concentration, and mobility are optimized to ≈1019 cm−3 and 740 cm2 V−1 s−1, respectively. With the tourmaline compositing, Sn vacancies are further suppressed and the thermal conductivity simultaneously decreases, with the minimum lattice thermal conductivity of 0.9 W m−1 K−1. Finally, the zT value ≈0.8 is obtained in the Sn0.99In0.01Te sample. The peak of the power output density reaches 0.89 W cm−2 at a temperature difference of 600 K. Such SnTe alloys with high and “temperature‐independent” PF will offer an option for realizing high output power in thermoelectric devices.

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Optical, electrical, and catalytic (photo-and sono-) properties of indium doped γ-Bi2O3 with Sillenite structure

Cited by 6 publications

References 48 publications

Indium containing sillenite semiconductor: Synthesis, structural, spectroscopic, and thermogravimetric analysis

Indium containing sillenite semiconductor: Synthesis, structural, spectroscopic, and thermogravimetric analysis

Nanosheets loaded on tetrahedral surfaces form a Z-type Bi₂MoO₆/γ-Bi₂O₃ heterojunction to enhance the photocatalytic degradation activity of lomefloxacin and Rhodamine B

Vacancy Suppression and Resonant Level Rendering Extraordinary Power Factor in Sn_0.99In_0.01Te/Tourmaline Composite

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Optical, electrical, and catalytic (photo-and sono-) properties of indium doped γ-Bi2O3 with Sillenite structure

Cited by 6 publications

References 48 publications

Indium containing sillenite semiconductor: Synthesis, structural, spectroscopic, and thermogravimetric analysis

Indium containing sillenite semiconductor: Synthesis, structural, spectroscopic, and thermogravimetric analysis

Nanosheets loaded on tetrahedral surfaces form a Z-type Bi2MoO6/γ-Bi2O3 heterojunction to enhance the photocatalytic degradation activity of lomefloxacin and Rhodamine B

Vacancy Suppression and Resonant Level Rendering Extraordinary Power Factor in Sn0.99In0.01Te/Tourmaline Composite

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Product

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Nanosheets loaded on tetrahedral surfaces form a Z-type Bi₂MoO₆/γ-Bi₂O₃ heterojunction to enhance the photocatalytic degradation activity of lomefloxacin and Rhodamine B

Vacancy Suppression and Resonant Level Rendering Extraordinary Power Factor in Sn_0.99In_0.01Te/Tourmaline Composite