Optical, electrical and photoelectrochemical characterization of electropolymerized poly methylene blue on fluorine doped tin oxide conducting glass

Chemical Oxidative Polymerization of Methylene Blue: Reaction Mechanism and Aspects of Chain Structure

“…The above assumptions are in indirect agreement with reports on the high electrical conductivity of polymethylene blue [ 15 ], as well as with the pronounced metallic luster of this polymer ( Figure 5 ).…”

“…The structure of the polymethylene blue chain is a subject of constant discussion in the literature and varies greatly in the works of various scientific teams [ 5 , 7 , 15 , 16 , 17 ]. Although the formation of quaternized nitrogen in the backbone seems to contradict the high electrical conductivity of polymethylene blue [ 15 ], the MALDI data indirectly indicate the presence of such units. In the MALDI of the starting methylene blue, under the conditions of detecting positively charged ions, signal 286.198 is observed ( Figure 4 ), which, most likely, can be caused by the loss of sulfur and a hydrogen atom during laser desorption from the DHB matrix ( Scheme 4 ).…”

“…The methylene blue polymer can act as a trap for hydroxyl radicals [ 12 ], is an effective adsorbent [ 13 ], and is promising for creating supercapacitors [ 14 ]. Films based on polymethylene blue have a high conductivity of about 103 S · cm −1 , which is of interest for the creation of conducting glasses [ 15 ]. Polymethylene blue can also be synthesized by chemical oxidation of methylene blue by the action of ammonium peroxodisulfate [ 9 ].…”

“…Although the area of possible application of polymethylene blue is rapidly expanding, the chain structure of this polymer remains a matter of debate [ 5 , 7 , 15 , 16 , 17 ]. The mechanism of photopolymerization of unsaturated compounds in the presence of methylene blue and reducing agents was described earlier [ 18 , 19 ], but the details of the mechanism of chemical oxidative polymerization of the methylene blue dye itself have not been established [ 17 ].…”

Properties of fluorine-doped SnO2 thin films by a green sol–gel method

“…However, its electrical resistivity is still quite high because of their intrinsically low carrier density and mobility. One way to reduce electrical resistivity of SnO 2 films is to control the concentration of oxygen vacancy by doping an extrinsic dopant such as the elements in groups IIB, IIIB, VB, and VIIB of the Periodic Table. These elements can be, but not limited to, zinc [4,5], indium [6][7][8][9], gallium [10,11], aluminum [12][13][14][15], antimony [16][17][18], and fluorine [19][20][21][22]. Among them, fluorine-doped tin oxide (FTO) films show rather low resistivity (in the order of 10 À 4 Ω cm) and highly chemical-and thermal-stable [23].…”