Optical, electrical and thermoelectric power studies of Al-Sb thin film bilayer structure

Abstract

The III-V semiconductors are of great importance due to their applications in various electro-optic devices. The Al-Sb thin film was deposited on glass substrate by thermal evaporation method at a pressure of 10-5 torr. The samples were annealed for 3 h at different constant temperatures in a vacuum chamber at a pressure of 10-5 torr. The electrical resistance vs temperature studies show phase transformation from metallic to semiconducting. The observed positive thermoelectric power indicates that Al-Sb thin films are p-type in nature. The Rutherford back scattering analysis and optical band gap measurements also indicate that the interdiffusion concentration varies with temperature.

Structural and Optical Properties of Znx/Te1-x Layered Thin Film on Glass Substrate

“…Stoichiometry ratio of pure Zn (99.99%) granules and Te (99.99%) powder has taken to prepare Zn x Te 1-x , where x=0.5,0.2 and 0.8. electronic balance has used to weigh these materials and found resolution of ±0.0001 g, in accordance with the percentage of composition used [7].The material to be coated is placed in a tungsten boat. After reaching the high vacuum (10 -5 mbar) in the chamber, the material is heated indirectly by passing the current slowly to the electrodes [8].…”

“…After reaching the high vacuum (10 -5 mbar) in the chamber, the material is heated indirectly by passing the current slowly to the electrodes [8]. Thin Films has prepared at room temperature, thickness and evaporation rate of -deposited films measured by quartz crystal monitor which is fixed to the unit [7]. Initially deposited Zn layer then Te layers was deposited with x=0.5,0.2 and 0.8 respectively to obtain stacked layers, and thin film thickness has measured through "Hind Hivac" Digital Thickness Monitor Model-DTM-101 [6,8].…”

Thermal and mechanical properties of La–Al–Sb alloys

“…The sample heat treated at 600°C showed metallic behavior from room temperature to 5 K. The resistivity of the samples heat treated at 800°C increased about 2-12 X cm value that is indicating almost semiconducting type behavior. Considering the XRD results, we believe that the change of the resistivity behavior of the samples is attributed to the changes of the phase formation in the samples with the applied heat treatment conditions [14,[26][27][28].…”

“…Al-Sb alloys exhibit a semiconducting behavior and therefore they are used in the solar cells [14]. Having good corrosion resistance of Al and its alloys is attributed to the presence of a thin protective surface oxide film [15,16].…”

Thermoelectric and mechanical properties of Mg–Al–Sb alloys

“…Mg-Sb alloys have smaller mass density and lower vapor pressure, compared with Pb-Te alloys, though similar structural properties [18][19][20]. Al-Sb alloys exhibit semiconducting behavior and therefore they are used in the solar cells [21]. Al-Mg alloys have wide applications such as ship building, chemical and food industry [22].…”