“…In fact, SK-grown InAs nano-islands embedded in InP(001) have shown optical emission spectra covering a wide photonenergy range, depending on the quantity of material deposited and on the duration of the growth interruption time during which island formation takes place. [7][8][9][10][11] Indeed, one can observe emission from well-defined peaks, each associated to a family of thin dots of the same heights, in the 0.8-1.1 eV energy range, 9,11 while emission from thicker dots in the 0.6-0.8 eV region rather results in broader peaks 8,10 with an indiscernible contribution from the different families, since the energy separation between two successive families decreases as the thickness of the dots is increased. In the latter case, the carriers are deeply confined, so a more stable emission behavior with temperature can be expected from such nanostructures, as compared with InAs/GaAs or thinner InAs/InP QD's.…”