2007
DOI: 10.1088/0268-1242/22/12/007
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Optical emission from InAs/InP self-assembled quantum dots: evidence for As/P intermixing

Abstract: We have studied the optical properties of ultrathin InAs/InP quantum wells and Stranski-Krastanov nanostructures using photoluminescence and photoluminescence excitation experiments. For InAs epilayers thinner than 2.4 monolayers, the emission spectrum consists of a single peak and the ground-state exciton energy is in good agreement with predictions based on the tight-binding method for ultrathin quantum wells. Beyond this thickness, the photoluminescence spectra evolve to a multimodal emission indicative of … Show more

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Cited by 8 publications
(10 citation statements)
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“…This is coherent with the distribution of diameters observed in the TEM plane view. Intermixing between As and P is expected to occur during the growth of such samples; the composition that we have deduced agrees well with those found for much thinner InAs layers deposited with the same system (x = 12% using k.P theory) 9 and for QD's grown by chemical beam epitaxy (x = 6%-10% based on tight-binding calculations). 11 The white curves in Fig.…”
Section: B Size Dependence Of the Temperature Behavior Of The Qd Lumsupporting
confidence: 85%
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“…This is coherent with the distribution of diameters observed in the TEM plane view. Intermixing between As and P is expected to occur during the growth of such samples; the composition that we have deduced agrees well with those found for much thinner InAs layers deposited with the same system (x = 12% using k.P theory) 9 and for QD's grown by chemical beam epitaxy (x = 6%-10% based on tight-binding calculations). 11 The white curves in Fig.…”
Section: B Size Dependence Of the Temperature Behavior Of The Qd Lumsupporting
confidence: 85%
“…Indeed, since the lateral confinement energy in these low-aspect-ratio InAs/InP QD structures is small, 7 we can reasonably describe their emission energies using those for quantum wells (QW's) with the same number of monolayers (ML's). 9,11,29 The excited states due to the lateral confinement, since they lie only a few meV above the ground state, should cause a widening of the emission peaks of each family (associated with a ground state and eventually excited states arising from vertical confinement), as does the lateral size distribution of dots of the same height, in addition to a slight blueshift.…”
Section: B Size Dependence Of the Temperature Behavior Of The Qd Lummentioning
confidence: 99%
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“…The PLE spectra of peaks A1 and A2 are similar to what was previously reported in thin InAs QWs. 27,30 They show an edge at 1.19Ϯ 0.01 eV and a resonance at 1.31Ϯ 0.01 eV that correspond, respectively, to the electron to heavy-and light-hole transitions in a 2-ML-thick InAs/InP QW as calculated with the tight-binding method. 27,31 It follows that the high-energy tail of the emission from sample A at low temperature corresponds to residual emission from the WL.…”
Section: Resultsmentioning
confidence: 99%
“…In order to solve some of the problems mentioned above, we present a study of the thermal quenching from two samples that contain a single layer of InAs QDs embedded in an InP matrix. Their PL spectra show several well-resolved emission bands, extending from 0.75 to 1.1 eV, that can be associated with families of QDs that differ in height by 1 ML, [21][22][23][24][25][26][27][28] while their PL excitation ͑PLE͒ spectra reveal absorption edges that we associate with QD excited states and WL resonances. The evolution with temperature of the multimodal PL of our samples imposes stringent constraints on a model based on coupled rate equations as it should reproduce the thermal behavior of many peaks with the same set of parameters.…”
mentioning
confidence: 93%